STD5NM50T4

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STD5NM50T4

MOSFET N-CH 500V 7.5A DPAK

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Spezifikationen

Supplier STMicroelectronics
Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 7.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 800mOhm @ 2.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 13 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 415 pF @ 25 V
PowerDissipation(Max) 100W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Übersicht

Description

STD5NM50T4 is an STMicroelectronics N-channel enhancement MOSFET in the high‑voltage STD5NM50 family. It’s intended for switching power applications such as offline SMPS, motor drives, and DC–DC converters.
Key points:
- High-voltage N‑channel trench MOSFET suitable for wide voltage rails (typical class around 500 V).
- Built for efficient switching with a rugged body diode and reliable on/off performance.
- Used in configurations like half‑bridge/full‑bridge with appropriate gate drive and protection.
Notes:
- Exact ratings (Vds, Id, Rds(on), Qg, packaging, thermal specs) vary by device variant; consult the current ST datasheet for STD5NM50T4 for precise numbers.
- Typical packaging options and gate-drive requirements depend on the specific package (D²PAK, TO‑220, etc.) and application.
If you need precise Electrical Characteristics or a recommended circuit, I can summarize the datasheet once you share the exact variant or a link.

Features

STD5NM50T4 is a STMicroelectronics 500 V N-channel power MOSFET. Key features:
- N-channel enhancement-mode MOSFET
- Vds: 500 V
- Id: up to about 5 A (depending on package and conditions)
- Rds(on): typically on the order of 0.6–0.9 Ω (varies by lot/drive)
- Avalanche ruggedness with robust body diode
- Fast switching with relatively low gate charge
- Suitable for switch-mode power supplies, motor drives, and high-voltage applications
- Package options (typical): D²PAK / DPAK style (surface-mount)
- Operating temperature: -55°C to 150°C
- RoHS-compliant
Note: exact electricals vary by lot and package; check the latest datasheet for precise specs and recommended hard-switching/applications.

Package

The STD5NM50T4 is supplied in a TO-220 (TO-220AB) through-hole plastic package. Check the STMicroelectronics datasheet for exact mechanical dimensions and pinout.

Pinout

- Pin count: 3 pins (plus the metal tab).
- Function: N-channel enhancement-mode MOSFET used as a high-voltage switching transistor.
- Pinout (TO-220AB style): 1 = Gate, 2 = Drain, 3 = Source; Tab is Drain.

Manufacturer

- Manufacturer: STMicroelectronics (ST)
- What kind of company: A global semiconductor company (multinational electronics manufacturer) headquartered in Geneva, Switzerland; designs and makes a wide range of ICs and discrete devices, including power semiconductors, microcontrollers, and sensors.

Application

STD5NM50T4 is a high‑voltage N‑channel MOSFET. Typical application areas include:
- Offline AC–DC SMPS front-ends
- DC–DC converters
- Motor drive/controllers
- Inverters for solar power, UPS, and industrial systems
- General high‑voltage switching in power electronics

Equivalent

I don’t have the full STD5NM50T4 datasheet here, but equivalents are other 500 V N‑channel power MOSFETs with matching VDS, ID, RDS(on), Qg and package. Common substitutes to consider: IRF830 / IRF840 (Vishay/IR), STW5NM50 / MTP5N50 (STMicro), FDPF5N50 (Fairchild/Vishay). Always verify electrical ratings, thermal limits and pinout against the original before substituting.

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