STD7NM60N

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STD7NM60N

MOSFET N-CH 600V 5A DPAK

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 900mOhm @ 2.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 14 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 363 pF @ 50 V
PowerDissipation(Max) 45W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Übersicht

Description

STD7NM60N is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications. It features a maximum drain-source voltage of 600V and a continuous drain current rating of 7A, making it suitable for high-voltage and high-current applications. The "N" in its designation indicates that it is an N-channel device, allowing it to conduct when a positive voltage is applied to the gate terminal relative to the source.
This MOSFET is often used in power supplies, motor drives, and switching applications due to its fast switching capabilities and low on-resistance, which leads to improved efficiency. Typical applications include inverters, converters, and amplifiers. The device may come in different package types, such as TO-220, providing flexibility in design and heat dissipation. Understanding its specifications and characteristics is crucial for engineers when designing circuits that require effective power management.

Features

The STD7NM60N is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: The continuous drain current (I_D) is rated at 7A, allowing it to manage significant loads.
3. R_DS(on): It has a low on-resistance (R_DS(on)) of about 0.75 ohms, which helps to reduce power losses and improve efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, providing flexibility for driving applications.
5. Package Type: Typically available in TO-220 or similar packages, facilitating heat dissipation and ease of handling.
6. Fast Switching: Designed for efficient switching, making it suitable for applications in power supplies, converters, and motor drives.
These attributes make the STD7NM60N a reliable choice for various electronic applications, particularly in power management and control circuits.

Package

The STD7NM60N is typically packaged in a TO-220 form factor. This package type is designed for power transistors, offering good thermal performance and ease of heat dissipation in applications such as switch-mode power supplies and motor control.

Pinout

The STD7NM60N is an N-channel MOSFET designed for power applications. It has a total of 3 pins. The functions of the pins are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the device on (conducting state) or off (non-conducting state).
2. Drain (D): This pin is where the load connects. The current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin connects to the ground or the negative side of the load. The source pin is where the current exits the MOSFET.
The STD7NM60N is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 7A, making it suitable for high-voltage applications.

Manufacturer

The STD7NM60N is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is headquartered in Geneva, Switzerland, and is one of the world's largest suppliers of semiconductor solutions. The company designs, develops, manufactures, and markets a wide range of products including microcontrollers, power management ICs, sensors, and discrete components. STMicroelectronics serves various markets, including automotive, industrial, consumer electronics, and communication equipment. They are known for their commitment to innovation and sustainability in the semiconductor industry.

Application

The STD7NM60N is a power MOSFET primarily used in applications such as power supply converters, motor control, and industrial automation. It is suitable for high-voltage switching applications, including DC-DC converters, inverters, and lighting control systems. Its low on-resistance and high-speed switching capabilities make it ideal for efficient power management in consumer electronics, renewable energy systems, and automotive applications.

Equivalent

Equivalent products to the STD7NM60N MOSFET include the IRF740, STP7NM60N, and FQD7N60. These components have similar voltage and current ratings, but always check the specific datasheets for detailed specifications and ensure compatibility in your application.

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