STD8N60DM2

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STD8N60DM2

MOSFET N-CH 600V 8A DPAK

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™ DM2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 600mOhm @ 4A, 10V
Vgs(th)(Max)@Id 5V @ 100µA
GateCharge(Qg)(Max)@Vgs 13.5 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 375 pF @ 100 V
PowerDissipation(Max) 85W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Übersicht

Description

The STD8N60DM2 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 8A. With a low on-resistance (R_DS(on)), it ensures efficient power management and minimal heat generation during operation. The device is housed in a DPAK package, which facilitates easy mounting and thermal dissipation.
Key characteristics include fast switching speeds, making it suitable for applications like switch-mode power supplies, motor drives, and various other power management systems. The STD8N60DM2 also includes a built-in body diode, providing reverse current capability, enhancing its versatility in circuit design.
Overall, the STD8N60DM2 is favored for its reliability and performance in demanding environments, making it a popular choice among engineers in the power electronics field.

Features

The STD8N60DM2 is a power MOSFET designed for high-voltage applications. Its key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage environments.

2. Current Rating: It has a continuous drain current (Id) of 8A at a temperature of 25°C, allowing for substantial current handling.
3. On-Resistance: It boasts a low on-resistance (Rds(on)) of approximately 0.6 Ω, which helps minimize power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2 to 4V, indicating efficient gate drive requirements.
5. Package: Typically offered in a TO-220 package, facilitating easy heat dissipation and PCB mounting.
6. Temperature Range: It operates over a wide temperature range, enhancing reliability in various environments.
These features make the STD8N60DM2 ideal for applications in power supplies, motor drives, and other high-voltage switching applications.

Package

The STD8N60DM2 is packaged in a TO-220 form factor. This package type is designed for efficient thermal performance and ease of mounting on heatsinks, making it suitable for high-power applications.

Pinout

The STD8N60DM2 is a N-channel MOSFET with a pin count of 3, typically arranged in a TO-220 package. The pins serve the following functions:
1. Gate (G) - This pin controls the MOSFET, allowing it to turn on or off based on the voltage applied to it.
2. Drain (D) - The drain pin connects to the load, where current flows out of the MOSFET when it is in the on state.
3. Source (S) - The source pin connects to the ground or the negative side of the circuit.
In summary, the STD8N60DM2 features three pins that facilitate its operation as a power switch in various applications.

Manufacturer

The STD8N60DM2 is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including discrete components, integrated circuits, and sensors. The company serves various industries, such as automotive, industrial, consumer, and communication applications. With a strong focus on innovation and sustainability, STMicroelectronics is known for its commitment to developing technology that enhances energy efficiency and performance.

Application

The STD8N60DM2 is a high-voltage N-channel MOSFET used primarily in power electronics applications. Its main areas include switching power supplies, motor control, lighting control, and automotive applications. It is suitable for high-efficiency designs in inverters, converters, and other high-frequency applications due to its fast switching capabilities and low on-resistance.

Equivalent

The STD8N60DM2 is an N-channel MOSFET. Equivalent products include:
1. STP8NK60Z
2. IRF840
3. MTP8N60E
4. FQP8N60C
5. SPT8N60
Always verify specifications such as voltage ratings, current ratings, and on-resistance to ensure compatibility for your specific application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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