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STF10N105K5
MOSFET N-CH 1050V 6A TO220FP
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- Fr. Teil #STF10N105K5
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- Datenblatt STF10N105K5 DataSheet
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Spezifikationen
| Series | MDmesh™ K5 |
| Part Status | Active |
| Base Product Number | STF10 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1050 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 21.5 nC @ 10 V |
| Vgs (Max) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 545 pF @ 100 V |
| Power Dissipation (Max) | 30W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package | TO-220-3 Full Pack |
| Packaging | Tube |
Übersicht
Description
Key specifications include a maximum drain-source voltage (V_DS) typically around 100V, a continuous drain current (I_D) of 10A, and low on-resistance (R_DS(on)), which enhances efficiency and reduces heat generation during operation. The device features a fast switching speed, making it suitable for applications such as DC-DC converters, motor drivers, and power supplies.
The STF10N105K5 is housed in a TO-220 package, which allows for effective heat dissipation. It is ideal for applications requiring robust performance and reliability. Proper thermal management and appropriate drive circuitry are essential for optimal operation.
Overall, this MOSFET is a versatile component used in various electronic devices and systems, contributing to improved energy efficiency and performance in power control applications.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V, suitable for various high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 10A, allowing for efficient power management.
3. R_DS(on): Low on-resistance, typically around 0.105 ohms, which enhances efficiency and reduces heat generation.
4. Gate Threshold Voltage (V_GS(th)): The gate-source threshold voltage is typically between 2V to 4V, facilitating easier drive from low-voltage controllers.
5. High-Speed Switching: Suitable for fast-switching applications, making it ideal for converters and inverters.
6. Package Type: Typically available in TO-220 or similar packages, facilitating easy heatsinking and installation.
7. Thermal Performance: Designed to handle high temperatures, with a maximum junction temperature of 150°C.
Overall, the STF10N105K5 is well-suited for automotive, industrial, and consumer electronics applications requiring efficient power management.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET operation. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit. Current exits the MOSFET through the source.
The device is designed for applications requiring efficient power switching and can handle high voltages and currents, making it suitable for various power management tasks.
Manufacturer
Application
Equivalent
Versand
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
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