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STF10N60M2
MOSFET N-CH 600V 7.5A TO220FP
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Spezifikationen
| Series | MDmesh™ II Plus |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 100 V |
| Power Dissipation (Max) | 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package / Case | TO-220-3 Full Pack |
| Base Product Number | STF10 |
Übersicht
Description
The device features a fast switching speed, which enhances efficiency in high-frequency operations, and is often used in conjunction with heat sinks to manage thermal performance. Its rugged design ensures reliable operation in harsh environments. The STF10N60M2 is housed in a TO-220 package, facilitating easy mounting and heat dissipation.
Overall, it is a versatile component ideal for engineers looking to optimize power management solutions in various electronic applications.
Features
- Voltage Rating: 600V, allowing it to handle high-voltage circuits.
- Current Rating: 10A continuous drain current, suitable for a variety of applications.
- RDS(on): Low on-resistance (typically around 0.18Ω at VGS = 10V), which reduces conduction losses and improves efficiency.
- Gate Threshold Voltage: 2V to 4V, which ensures compatibility with low-voltage drive circuits.
- Fast Switching Speeds: Suitable for high-frequency applications due to rapid switching capability.
- Package: Available in TO-220 and DPAK packages, facilitating easy thermal management and assembly.
- Applications: Widely used in power supplies, inverters, and motor drives.
These features make the STF10N60M2 an excellent choice for energy-efficient designs in various electronic applications.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current flows out of the device. It is connected to the load.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit, allowing the current to flow from drain to source when the MOSFET is turned on.
The STF10N60M2 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 10A. It is commonly used in power management, switching applications, and inverters.
Manufacturer
Application
Equivalent
1. IRF840 (International Rectifier)
2. BTA10-600V (STMicroelectronics)
3. MTP10N60E (ON Semiconductor)
4. FQP10N60 (Fairchild Semiconductor)
Always check specifications for exact compatibility in your application.
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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