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STF13N80K5
MOSFET N-CH 800V 12A TO220FP
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- Datenblatt STF13N80K5 DataSheet
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Spezifikationen
| Series | SuperMESH5™ |
| Part Status | Active |
| Base Product Number | STF13 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V |
| Power Dissipation (Max) | 35W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package | TO-220-3 Full Pack |
| Packaging | Tube |
Übersicht
Description
Its fast switching capabilities allow for efficient control in high-frequency applications. The STF13N80K5 typically comes in a TO-220 package, enabling effective heat dissipation and easy mounting on heat sinks. Key parameters to consider when using this device include gate threshold voltage, maximum gate-source voltage, and thermal characteristics. Overall, the STF13N80K5 is widely used in industrial and consumer electronics for its reliability and performance in high-voltage environments.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage circuits.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 13A, with a pulsed current capability higher than the continuous rating.
3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.8 ohms, which improves efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges between 2-4V, allowing for adequate control with lower gate drive voltages.
5. Package: Available in a TO-220 package, facilitating good thermal performance and ease of mounting.
6. Fast Switching: Designed for fast switching applications, making it suitable for use in switch-mode power supplies and inverters.
Overall, the STF13N80K5 combines high performance with reliability for various power electronic applications.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows into the MOSFET when it is turned on.
3. Source (S): This terminal allows the current to flow out of the MOSFET when it is conducting.
The STF13N80K5 has a maximum drain-source voltage (Vds) of 800V and a continuous drain current (Id) of 13A. It is commonly used in high-voltage applications and power supply circuits.
Manufacturer
Application
Equivalent
1. STP13N80K5 (similar specifications, but different package)
2. IRF840 (600V, higher Rds(on))
3. FQP13N80C (similar voltage rating)
4. MTP13N80E (800V, similar specs)
Always check specific datasheets for exact characteristics and compatibility.
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Zahlungen
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