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STF18NM60N
MOSFET N-CH 600V 13A TO220FP
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- Datenblatt STF18NM60N DataSheet
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Spezifikationen
| Series | MDmesh™ II |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 285mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 50 V |
| Power Dissipation (Max) | 30W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package / Case | TO-220-3 Full Pack |
| Base Product Number | STF18 |
Übersicht
Description
This MOSFET is particularly effective in applications such as power supplies, motor drives, and industrial equipment. Its robust thermal performance and fast switching capabilities make it ideal for use in both high-frequency and high-efficiency circuits. Additionally, the STF18NM60N typically comes in a TO-220 package, which allows for effective heat dissipation and ease of mounting.
Overall, the STF18NM60N is a reliable choice for engineers looking to optimize performance in demanding electronic environments.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 600V, suitable for high-voltage applications.
2. Continuous Drain Current: Up to 18A, allowing for efficient current handling.
3. On-Resistance (R_DS(on)): Low R_DS(on) value (typically around 0.18Ω), which minimizes power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, ensuring compatibility with low-voltage drive levels.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation.
6. Fast Switching: Optimized for high-speed switching applications, improving efficiency in converters and inverters.
7. Thermal Resistance: Good thermal characteristics, allowing for better performance at elevated temperatures.
These features make the STF18NM60N suitable for use in applications such as switch-mode power supplies, motor drives, and other industrial power electronic circuits.
Package
Pinout
Pin Configuration:
1. Gate (G) - Controls the MOSFET and is used to turn it on or off.
2. Drain (D) - The terminal through which the current flows out of the MOSFET; connected to the load.
3. Source (S) - The terminal through which the current enters the MOSFET; typically connected to ground in an N-channel configuration.
Key Specifications:
- Maximum Drain-Source Voltage (V_DS): 600V
- Continuous Drain Current (I_D): Up to 18A
- R_DS(on): Low on-resistance, enhancing efficiency.
The STF18NM60N is commonly used in applications like power supplies, motor drives, and other switching applications due to its high voltage and current capabilities.
Manufacturer
Application
Equivalent
1. IRF840
2. STP18NM60
3. FQP18N60
4. BTA18-600V (for similar applications)
5. MTP18N60
Always check datasheets for specifications and ensure compatibility with your circuit requirements.
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Zahlungen
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