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STF28NM50N
MOSFET N-CH 500V 21A TO220FP
- Hersteller
- Fr. Teil #STF28NM50N
- Paket TO-220FP
- Datenblatt STF28NM50N DataSheet
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Spezifikationen
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 21A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 158mOhm @ 10.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1735 pF @ 25 V |
| PowerDissipation(Max) | 35W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
Übersicht
Description
It typically comes in a TO-220 package, facilitating easy heat dissipation. The STF28NM50N is designed for high-frequency operation, making it ideal for applications where switching speed is crucial. Additionally, its robust construction contributes to reliability in demanding environments. Overall, the STF28NM50N is a versatile component widely used in power electronics for its performance and efficiency.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 28A at a case temperature of 25°C, providing robust performance in power circuits.
3. On-Resistance (R_DS(on)): Low on-resistance of approximately 0.12 ohms, which helps minimize conduction losses.
4. Gate Threshold Voltage (V_GS(th)): Typically around 2-4V, enabling efficient switching behavior.
5. Package Type: Available in TO-220, which allows for easy heat dissipation and mounting in various applications.
6. Fast Switching Speed: High-speed operation allows for efficient control in switching applications.
7. Applications: Commonly used in power supplies, motor drivers, and other high-efficiency power conversion systems.
Overall, the STF28NM50N is suitable for demanding applications requiring high efficiency and reliability.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching function. A voltage applied to this pin turns the device on or off.
2. Drain (D): The terminal through which the main current flows when the device is in the on state. It connects to the load.
3. Source (S): The terminal that is connected to the ground or the negative side of the circuit.
The STF28NM50N is rated for a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 28A, making it suitable for use in power supply circuits, motor drivers, and other high-voltage applications.
Manufacturer
Application
Equivalent
- STP28NM50N
- IRF840
- MTP50N50
- BUK555-500
Always check the specific datasheets for detailed specifications and ensure compatibility with your application.
Versand
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Versandgebührenreferenz (DHL/FedEx):
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
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