STF33N60M2

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STF33N60M2

MOSFET N-CH 600V 26A TO220FP

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Spezifikationen

Series MDmesh™ II Plus
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 100 V
Power Dissipation (Max) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FP
Package / Case TO-220-3 Full Pack
Base Product Number STF33

Übersicht

Description

The STF33N60M2 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. It features a voltage rating of 600V and a continuous drain current of 33A, making it suitable for high-voltage and high-current scenarios. The device is characterized by low on-resistance, ensuring efficient operation and minimal power loss during switching.
Its fast switching capabilities make it ideal for use in applications such as power supplies, motor drives, and industrial equipment. The STF33N60M2 typically comes in a TO-220 package, providing effective thermal management through its ability to dissipate heat efficiently.
Engineered for reliability and performance, this MOSFET is widely utilized in both consumer electronics and industrial systems, thanks to its robustness and ease of integration into existing circuits. Proper thermal management and gate drive considerations are essential for optimal performance in applications, ensuring the device operates within its specified limits.

Features

The STF33N60M2 is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage (V_DS).
2. Continuous Drain Current: 33A at a temperature of 25°C, which allows for robust performance in various applications.
3. R_DS(on): Low on-resistance (typically around 0.18 ohms) minimizes conduction losses, enhancing efficiency.
4. Gate Threshold Voltage: 2V to 4V (V_GS(th)), which facilitates easier drive requirements.
5. Fast Switching: Designed for high-speed switching applications, making it suitable for power supplies and motor control.
6. Package Type: Typically available in TO-220 or similar packages for effective heat dissipation.
7. Thermal Resistance: Low thermal resistance ensures better thermal management.
These features make the STF33N60M2 ideal for applications like switch-mode power supplies (SMPS), inverters, and other power management systems.

Package

The STF33N60M2 is packaged in a TO-220 form factor, which is a type of metal-cased package commonly used for power transistors. This package provides good heat dissipation and is designed for high-power applications.

Pinout

The STF33N60M2 is a power MOSFET from STMicroelectronics, specifically designed for high-voltage applications. It has a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's operation. Applying a voltage to this pin turns the MOSFET on or off.
2. Drain (D): The drain pin is where the current flows out of the MOSFET when it is switched on. It connects to the load in the circuit.
3. Source (S): This pin is the common terminal for the source of the current that enters the MOSFET.
The device is rated for a maximum drain-source voltage of 600V and can handle a continuous drain current of 33A, making it suitable for various power conversion applications.

Manufacturer

The STF33N60M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is headquartered in Geneva, Switzerland, and is known for its diverse range of products, including integrated circuits, microcontrollers, sensors, and power management devices. The company serves various industries, such as automotive, industrial, consumer electronics, and communications. STMicroelectronics focuses on innovation and sustainability, offering solutions that enhance energy efficiency and support the development of smart technologies. Their products are essential in applications requiring reliable performance, such as power conversion, motor control, and automotive systems.

Application

The STF33N60M2 is a N-channel MOSFET primarily used in power electronics applications. Key areas include switch-mode power supplies, DC-DC converters, motor drives, and inverters. Its high voltage and current ratings make it suitable for industrial applications, renewable energy systems, and automotive electronics. Additionally, it is utilized in lighting control and various high-efficiency power management circuits.

Equivalent

The STF33N60M2 is a 600V N-channel MOSFET from STMicroelectronics. Equivalent products include the IRF3205, BSC092N06LS, and MTP50N60E, among others. Ensure to check specifications like RDS(on), VGS, and total gate charge to confirm compatibility for specific applications.

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