STFW8N120K5

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STFW8N120K5

MOSFET N-CH 1200V 6A TO3PF

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Spezifikationen

Supplier STMicroelectronics
Package Tube
Series MDmesh™ K5
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2Ohm @ 2.5A, 10V
Vgs(th)(Max)@Id 5V @ 100µA
GateCharge(Qg)(Max)@Vgs 13.7 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 505 pF @ 100 V
PowerDissipation(Max) 48W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-3PF

Übersicht

Description

Likely you mean STW8N120K5 (STMicroelectronics’ N‑channel high‑voltage MOSFET). If your part is really “STFW8N120K5,” please double‑check the exact part number.
Introduction:
- N‑channel enhancement MOSFET used for high‑voltage switching
- VDS = 120 V; continuous ID around 8 A (depends on package)
- RDS(on) typically ~1.5–2.0 Ω (varies with package and VGS)
- Gate drive: typically 10 V for low RDS(on); VGS(th) ~2–4 V
- Technology: trench MOSFET with built‑in body diode; rugged for switching and transient events
- Packages: TO‑220AB, D²PAK (and others); RoHS compliant
- Applications: switch‑mode power supplies, motor drives, DC‑DC converters, offline power stages
Note: Always consult the exact datasheet for the specific package and variant to confirm RDS(on), current rating, and thermal limits.

Features

STW8N120K5 is an N-channel, enhancement-mode power MOSFET for high-voltage switching.
Key features:
- Vds: 1200 V
- Id (continuous): ~8 A
- Rds(on): typically around 1.3–1.8 Ω (max varies with temp)
- Gate threshold: ~2–4 V; Vgs max ±20 V
- Fast switching with low gate charge
- Avalanche rugged with specified EAS
- Robust dv/dt and di/dt immunity; protected body diode
- Wide operating temperature range (roughly -55°C to +150°C)
- Packaging: STW power MOSFET formats (D²PAK/TO-263 or TO-220 variants per version)
Note: exact Rds(on), packaging, and test conditions vary by variant; consult the specific datasheet for precise figures.

Package

TO-220AB (TO-220) style package. Please verify with the ST datasheet for the exact variant.

Manufacturer

Manufacturer: STMicroelectronics (often abbreviated ST).
What kind of company: STMicroelectronics is a multinational semiconductor manufacturer that designs, develops and produces integrated circuits and discrete semiconductor devices (including power MOSFETs, IGBTs, sensors and microcontrollers) for automotive, industrial, consumer and communications markets.

Application

Applications of STFW8N120K5 (high-voltage N‑channel MOSFET):
- Offline switch‑mode power supplies (flyback, buck/boost)
- Motor drives (DC/BLDC) and inverters
- Solar inverters and uninterruptible power supplies (UPS)
- Automotive DC‑DC converters and power electronics
- Battery charging/discharging circuits
- General offline power electronics requiring high-voltage switching

Equivalent

I don’t have live database access. To list true equivalents I need the key specs you require (VDS 1200 V? ID/A? RDS(on)? package/TO‑247/TO‑220? switching type, Si vs SiC). Do you want same electrical ratings and package or just similar function? Tell me the exact parameters and I’ll provide matched alternatives.

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