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STGB20N45LZAG
POWER TRANSISTORS
- Hersteller
- Fr. Teil #STGB20N45LZAG
- Paket TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Datenblatt STGB20N45LZAG DataSheet
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Spezifikationen
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| Voltage-CollectorEmitterBreakdown(Max) | 450 V |
| Current-Collector(Ic)(Max) | 25 A |
| Current-CollectorPulsed(Icm) | 50 A |
| Vce(on)(Max)@VgeIc | 1.25V @ 4V, 6A |
| Power-Max | 150 W |
| InputType | Logic |
| GateCharge | 26 nC |
| Td(on/off)@25°C | 1.1µs/4.6µs |
| TestCondition | 300V, 10A, 1kOhm, 5V |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Übersicht
Description
Key specifications typically include low on-resistance (RDS(on)), which reduces power loss during operation, and fast switching speeds, contributing to better efficiency and thermal performance. Its MOSFET construction allows for easy integration into various electronic circuits, providing reliable operation in demanding environments. Overall, STGB20N45LZAG is ideal for applications requiring efficient power handling and thermal stability.
Features
1. Voltage Rating: 450V, allowing it to handle high-voltage applications.
2. Current Rating: 20A continuous drain current with appropriate heat sinking.
3. RDS(on): Low on-resistance (typically around 0.27Ω at VGS = 10V), minimizing conduction losses.
4. Gate Threshold Voltage (VGS(th)): Typically ranges from 2V to 4V, enabling efficient switching.
5. Fast Switching Speed: Suitable for high-frequency applications due to low gate charge (QG).
6. Thermal Management: Capable of operating at high temperatures with a maximum junction temperature of 150°C.
7. Package: Available in TO-220, ensuring good thermal performance and ease of mounting.
These characteristics make the STGB20N45LZAG a reliable choice for efficient switching and power conversion solutions in demanding environments.
Package
Pinout
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - Connected to the load, where current flows out.
3. Source (S) - Connected to the ground or the lower potential in the circuit.
The MOSFET is designed for high-voltage applications and has a maximum drain-source voltage (V_DS) of 450V, a continuous drain current (I_D) of 20A, and low on-state resistance (R_DS(on)), making it suitable for various applications such as power supplies, motor drives, and inverters. Always refer to the specific datasheet for complete electrical characteristics and thermal management details.
Manufacturer
Application
Equivalent
Versand
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
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