STGW30NC60KD

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STGW30NC60KD

IGBT 600V 60A TO-247-3

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Spezifikationen

Series PowerMESH™
Part Status Active
Base Product Number STGW30
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 125 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A
Power - Max 200 W
Switching Energy 350µJ (on), 435µJ (off)
Input Type Standard
Gate Charge 96 nC
Td (on/off) @ 25°C 29ns/120ns
Test Condition 480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 40 ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package TO-247-3
Supplier Device Package TO-247-3
Packaging Tube

Übersicht

Description

The STGW30NC60KD is a high-voltage, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in various applications, including power supplies, motor drivers, and other switching circuits that require efficient power management.
Key specifications include a maximum voltage rating of 600V, a continuous drain current of 30A, and a low on-resistance that ensures minimal power loss during operation. The device features a rugged design, making it suitable for harsh environments, and is packaged in a TO-220 format for easy thermal management and mounting.
Its fast switching capabilities and high efficiency make the STGW30NC60KD an ideal choice for high-frequency applications. Overall, it combines reliability and performance, making it a popular choice in industrial and consumer electronic systems.

Features

The STGW30NC60KD is an N-channel power MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: Continuous drain current (I_D) is rated at 30A, allowing substantial load handling.
3. R_DS(on): Low on-resistance of approximately 0.18 ohm, ensuring minimal conduction losses and improved efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2 to 4V, enabling ease of drive with standard gate voltage levels.
5. Operating Temperature: It supports a wide operating temperature range, enhancing reliability across various conditions.
6. Package Type: Available in a TO-220 package for efficient heat dissipation and ease of mounting.
7. Applications: Ideal for switch-mode power supplies, motor control, and other high-voltage switching applications.
Overall, the STGW30NC60KD combines high voltage and current ratings with low on-resistance, making it an excellent choice for demanding electronic applications.

Package

The STGW30NC60KD is packaged in a TO-220 format. This package type is commonly used for power devices, providing efficient heat dissipation and easy mounting on heatsinks.

Pinout

The STGW30NC60KD is a N-channel MOSFET with a pin count of 4. The functions of the pins are as follows:
1. Gate (G): This pin is used to control the switching action of the MOSFET. Applying a voltage to this pin turns the device on or off.
2. Drain (D): The drain pin is where the load is connected. Current flows from the drain to the source when the device is on.
3. Source (S): This pin is connected to the ground or negative terminal of the power supply. It serves as the return path for the current.
4. Gate (G): There is an additional pin that can be connected for specific configurations, but primarily, the gate pin is crucial for controlling the device.
The STGW30NC60KD is designed for high-voltage applications, capable of handling up to 600V and a continuous drain current of 30A.

Manufacturer

The STGW30NC60KD is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for its development and production of a wide range of semiconductor devices, including integrated circuits, discrete devices, and sensors. The company serves various sectors such as automotive, industrial, consumer electronics, and communication, focusing on innovation and sustainability in technology solutions. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics operates in multiple countries and is one of the leading suppliers in the semiconductor industry.

Application

The STGW30NC60KD is a high-voltage IGBT (Insulated Gate Bipolar Transistor) commonly used in power electronics applications. Key areas include industrial motor drives, induction heating, switch-mode power supplies, and renewable energy systems such as solar inverters and wind turbines. It is ideal for applications requiring high efficiency and fast switching capabilities in medium to high power levels.

Equivalent

The STGW30NC60KD is a 600V, 30A IGBT. Equivalent products include:
1. IRG4PH30KD - International Rectifier
2. FGA30N60 - Fairchild Semiconductor (now part of ON Semiconductor)
3. MG30J6ES - Mitsubishi Electric
4. BUK456-600 - NXP Semiconductors
Always check the datasheets for specific parameters to confirm compatibility in your application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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