STGW40V60DF

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STGW40V60DF

IGBT 600V 80A 283W TO247

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Spezifikationen

Package Tube
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 160 A
Vce(on)(Max)@VgeIc 2.3V @ 15V, 40A
Power-Max 283 W
SwitchingEnergy 456µJ (on), 411µJ (off)
InputType Standard
GateCharge 226 nC
Td(on/off)@25°C 52ns/208ns
TestCondition 400V, 40A, 10Ohm, 15V
ReverseRecoveryTime(trr) 41 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Übersicht

Description

The STGW40V60DF is a high-voltage, N-channel power MOSFET designed for use in various applications such as switch-mode power supplies, industrial equipment, and automotive systems. It features a voltage rating of 600V and a maximum continuous drain current of 40A, making it suitable for high-power applications. The device exhibits low on-resistance (RDS(on)), which minimizes conduction losses and enhances efficiency.
Additionally, the STGW40V60DF has a fast switching capability, which is advantageous for applications that require rapid on-off transitions. It is packaged in a TO-220 format, facilitating easy heat dissipation and integration into circuit designs. The MOSFET is also characterized by its robust thermal performance and reliability, making it a preferred choice for engineers seeking high-performance components in challenging environments. Overall, the STGW40V60DF is a versatile component that balances performance, efficiency, and reliability for demanding electronic applications.

Features

The STGW40V60DF is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various applications including inverters, motor drives, and industrial power supplies. Key features include:
1. Voltage Rating: It has a maximum collector-emitter voltage (Vce) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It supports a continuous collector current (Ic) of 40A, allowing for significant power handling.
3. Low Switching Loss: The device exhibits low switching losses, enhancing efficiency in power conversion applications.
4. Fast Switching Speed: Optimized for rapid switching, which improves overall system performance.
5. Thermal Management: Designed with a robust thermal resistance, it can handle elevated temperatures, crucial for reliability in demanding environments.
6. Hermetic Packaging: Offers enhanced reliability and longevity in various industrial conditions.
Overall, the STGW40V60DF is well-suited for applications requiring efficient and reliable power management.

Package

The STGW40V60DF is packaged in a TO-247 format. This package type is designed for high-power applications, providing excellent thermal performance and electrical insulation.

Pinout

The STGW40V60DF is a 40A, 600V MOSFET from STMicroelectronics, designed for various power applications. It comes in a TO-220 package, which typically features three pins.
Pin Count and Function:
1. Gate (G): Controls the MOSFET's switching operation; a voltage applied here turns the device on or off.
2. Drain (D): The output terminal where the load is connected; current flows from the drain to the source when the device is on.
3. Source (S): The terminal connected to the ground or the negative side of the power supply, allowing current to flow from the drain to the source.
The STGW40V60DF is suitable for applications such as switch-mode power supplies, motor drives, and other high-efficiency power management systems.

Manufacturer

The STGW40V60DF is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of electronic components, including microcontrollers, sensors, and power management devices. The company serves various markets, such as automotive, industrial, telecommunications, and consumer electronics. With a focus on innovation, STMicroelectronics aims to provide advanced solutions that drive the development of the Internet of Things (IoT) and smart technologies. Established in 1987, the company has a strong presence worldwide, combining expertise in analog, digital, and mixed-signal technologies.

Application

The STGW40V60DF is a 600V, 40A IGBT (Insulated Gate Bipolar Transistor) used primarily in industrial applications such as motor drives, welding equipment, and power inverters. It is suitable for high-frequency switching applications, including renewable energy systems (like solar inverters), UPS systems, and induction heating. Its robust design ensures efficient performance in high-power and high-voltage environments.

Equivalent

The STGW40V60DF is a high-voltage, 600V IGBT. Equivalent products include the Infineon IGBT series, such as the BSM100GA120DN2, the Mitsubishi MG100J2YS50, and the ON Semiconductor MBRF2KB60. Ensure to check specifications like current rating, switching frequency, and thermal characteristics for compatibility in your application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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