STGWT80H65DFB

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STGWT80H65DFB

IGBT 650V 120A 469W TO3P-3L

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Spezifikationen

Package Tube
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 650 V
Current-Collector(Ic)(Max) 120 A
Current-CollectorPulsed(Icm) 240 A
Vce(on)(Max)@VgeIc 2V @ 15V, 80A
Power-Max 469 W
SwitchingEnergy 2.1mJ (on), 1.5mJ (off)
InputType Standard
GateCharge 414 nC
Td(on/off)@25°C 84ns/280ns
TestCondition 400V, 80A, 10Ohm, 15V
ReverseRecoveryTime(trr) 85 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-3P-3, SC-65-3

Übersicht

Description

The STGWT80H65DFB is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It operates at a maximum drain-source voltage of 650V and is capable of handling continuous drain currents of up to 80A, making it suitable for use in various high-voltage and high-current applications, including power supplies, motor drives, and industrial equipment.
Key features include low on-resistance (RDS(on)), which minimizes power losses during operation, and fast switching speeds that enhance efficiency in switching applications. The device is housed in a TO-220 package, facilitating good thermal performance and ease of heatsinking.
Typically, the STGWT80H65DFB is utilized in scenarios where efficiency and thermal management are critical, and it is favored in designs requiring robust performance under high-stress conditions. Its compatibility with standard driver circuits also makes it a versatile choice for engineers looking to optimize their power electronic solutions.

Features

The STGWT80H65DFB is a high-performance MOSFET (metal-oxide-semiconductor field-effect transistor) featuring a 650V voltage rating and a maximum continuous drain current of 80A. It is designed for efficient switching applications in power converters, motor drives, and other high-voltage systems. Key features include:
1. Low Rds(on): This ensures reduced conduction losses and enhanced efficiency during operation.
2. Fast switching speed: Facilitates high-frequency operation, minimizing switching losses.
3. Thermal stability: The device is optimized for thermal performance, allowing better heat dissipation.
4. Avalanche rated: Provides additional reliability in transient conditions.
5. TO-220 package: Offers easy mounting and heat sinking options for better thermal management.
Overall, the STGWT80H65DFB is ideal for applications requiring high efficiency and reliability in power electronics.

Package

The STGWT80H65DFB is typically packaged in a TO-247 format. This package type is designed for high-power applications, providing efficient thermal management and robust electrical performance.

Pinout

The STGWT80H65DFB is a high-voltage N-channel MOSFET from STMicroelectronics, featuring a total of 8 pins. The pin configuration includes:
1. Gate (G) - Controls the operation of the MOSFET.
2. Drain (D) - The terminal through which current flows out of the MOSFET.
3. Source (S) - The terminal through which current flows into the MOSFET.
4-8. Additional Drain/Source Pins - These may be used for enhanced current handling or thermal performance.
The key functions of the pins are as follows:
- Gate (G): Used to switch the MOSFET on and off by applying a voltage.
- Drain (D): Connected to the load in a typical application.
- Source (S): Connected to the ground or negative supply in a circuit.
This MOSFET is designed for applications requiring high efficiency and fast switching, making it suitable for power converters, motor drives, and other high-frequency applications.

Manufacturer

The STGWT80H65DFB is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. STMicroelectronics designs and manufactures a wide range of semiconductor products, including integrated circuits, microcontrollers, and power management devices. The company serves various industries, including automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is known for its innovation and commitment to research and development, playing a significant role in the advancement of technology in multiple sectors.

Application

The STGWT80H65DFB is a N-channel MOSFET primarily used in power electronics applications. Its key application areas include industrial motor drives, power supplies, renewable energy systems (like solar inverters), electric vehicles, and high-frequency switching applications. It is designed for high-efficiency switching and thermal performance, making it suitable for various power management solutions.

Equivalent

The STGWT80H65DFB chip is a 650V, 80A N-channel MOSFET. Equivalent products include the Infineon IPW80R065CFD, ON Semiconductor NTP80N65, and Vishay SIHG80N65. Always verify specifications and suitability for your specific application before replacement.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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