STH240N10F7-2

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STH240N10F7-2

MOSFET N-CH 100V 180A H2PAK-2

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series STripFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 180A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.5mOhm @ 60A, 10V
Vgs(th)(Max)@Id 4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 160 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 11550 pF @ 25 V
PowerDissipation(Max) 300W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage H2Pak-2

Übersicht

Description

STH240N10F7-2 is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various applications in power electronics. It features a low on-resistance (RDS(on)), which minimizes conduction losses and enhances efficiency in circuits. With a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 240A, this MOSFET is suitable for high-power applications, including switch-mode power supplies, motor drivers, and DC-DC converters.
The device utilizes advanced F7 technology, providing improved thermal performance and faster switching speeds, making it ideal for applications requiring high efficiency and reliability. Its package design facilitates easy integration into circuit boards while ensuring effective heat dissipation. Overall, the STH240N10F7-2 is an excellent choice for engineers looking to optimize performance in demanding power electronic environments.

Features

The STH240N10F7-2 is a N-channel MOSFET designed for high-performance power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for medium-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of 240A, providing high-current capacity.
3. R_DS(on): Low on-resistance of 7.5 mΩ (max) at V_GS = 10V, which ensures minimal power loss during operation.
4. Gate Threshold Voltage: A gate threshold voltage (V_GS(th)) ranging from 2V to 4V allows for efficient switching.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching: Designed for rapid switching applications, enhancing efficiency in power converters and inverters.
7. Thermal Performance: High power dissipation capability improves reliability in demanding environments.
These features make the STH240N10F7-2 suitable for automotive, industrial, and consumer electronics applications.

Package

The STH240N10F7-2 is packaged in a TO-247 style package. This package type is typically used for high-power applications, providing good thermal performance and ease of mounting on heatsinks.

Pinout

The STH240N10F7-2 is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): The control terminal that receives the input signal to turn the MOSFET on or off.
2. Drain (D): The terminal through which the current flows out when the MOSFET is turned on.
3. Source (S): The terminal through which the current enters when the MOSFET is in the conducting state.
This MOSFET is designed for applications that require high efficiency and fast switching, making it suitable for power management, switching power supplies, and various electronic circuits. Its specifications include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 240A, which allows it to handle significant power levels.

Manufacturer

The STH240N10F7-2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a broad range of semiconductor solutions, including microcontrollers, power management chips, and various discrete components. The company serves a diverse array of sectors, such as automotive, industrial, personal electronics, and communications. STMicroelectronics is known for its innovation and commitment to sustainability, focusing on energy-efficient and environmentally friendly technologies. With a strong presence in both Europe and Asia, it plays a significant role in the global electronics market.

Application

The STH240N10F7-2 is an N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, motor drives, power supplies, and inverters for renewable energy systems. It is also suitable for automotive applications, industrial controls, and consumer electronics due to its high efficiency and switching speed.

Equivalent

The STH240N10F7-2 is an N-channel MOSFET. Equivalent products include the IRF240, FQP240N10, and BSC240N10. When selecting an equivalent, ensure they match in key specifications such as voltage rating, current capacity, and R_DS(on). Always verify the datasheets for precise characteristics.

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