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STH310N10F7-6
MOSFET N-CH 100V 180A H2PAK-6
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- Fr. Teil #STH310N10F7-6
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- Datenblatt STH310N10F7-6 DataSheet
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Spezifikationen
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | DeepGATE™, STripFET™ VII |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.5mOhm @ 60A, 10V |
| Vgs(th)(Max)@Id | 3.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 180 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 12800 pF @ 25 V |
| PowerDissipation(Max) | 315W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | H2PAK-6 |
Übersicht
Description
Key specifications include a maximum continuous drain current of 310A and a low gate threshold voltage, making it efficient for various applications. The device is housed in a TO-220 package, facilitating effective thermal management. Its robust design and reliability contribute to improved efficiency and performance in electronic systems.
Due to its characteristics, the STH310N10F7-6 is widely utilized in automotive, industrial, and consumer electronics, where effective power management is crucial.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power management applications.
2. Current Rating: With a continuous drain current (I_D) of up to 310A, it can handle significant power loads.
3. R_DS(on): The on-resistance is as low as 7.6 mΩ, which minimizes conduction losses and enhances efficiency.
4. Thermal Performance: It has a high junction-to-ambient thermal resistance, allowing for effective heat dissipation.
5. Gate Threshold Voltage: The gate-to-source threshold voltage is low, which allows for easy driving with logic-level signals.
6. Package Type: Typically available in a TO-220 or similar package, facilitating easy mounting and heat sinking.
7. Fast Switching: Designed for rapid switching applications, making it ideal for power supplies, motor drives, and converters.
These features make the STH310N10F7-6 a versatile choice for power electronic designs.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output terminal where the current flows out of the MOSFET when it is turned on.
3. Source (S): This is the input terminal where the current enters the MOSFET when it is turned on.
The STH310N10F7-6 is designed for high-efficiency switching applications, with a maximum continuous drain current and low on-resistance, making it suitable for power management and conversion tasks in various electronic devices.
Manufacturer
Application
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Zahlungen
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