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STP110N8F6
MOSFET N-CH 80V 110A TO220
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- Fr. Teil #STP110N8F6
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- Datenblatt STP110N8F6 DataSheet
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Spezifikationen
| Series | STripFET™ F6 |
| Part Status | Obsolete |
| Base Product Number | STP110 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 55A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9130 pF @ 40 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package | TO-220-3 |
| Packaging | Tube |
Übersicht
Description
Key specifications include a low on-resistance (Rds(on)) of around 0.09 ohms, which enhances efficiency by minimizing power losses during operation. The STP110N8F6 is often used in power supply circuits, motor control, and other applications requiring high current handling and thermal performance.
Its package type, typically a TO-220 or similar, allows for effective heat dissipation, supporting reliable performance in demanding environments. Overall, this MOSFET is valued for its robustness, efficiency, and versatility in various electronic designs.
Features
1. Type: N-channel MOSFET.
2. Voltage Rating: 80V maximum drain-source voltage (V_DS).
3. Current Rating: Continuous drain current of 110A, providing high current handling capability.
4. R_DS(on): Low on-resistance of about 6.5 mΩ, which minimizes power loss and improves efficiency.
5. Gate-Source Voltage: Rated at ±20V, allowing for versatile gate drive configurations.
6. Package: Available in DPAK or TO-220, which aids in thermal dissipation.
7. Switching Speed: Fast switching capabilities, making it suitable for applications like DC-DC converters and power management systems.
8. Applications: Ideal for automotive, industrial, and consumer electronics where efficient power conversion is crucial.
These attributes make the STP110N8F6 a reliable choice for engineers seeking robust performance in power electronic designs.
Package
Pinout
Here's a brief breakdown of the pin configuration:
1. Gate (G): Controls the MOSFET operation; applying voltage here turns the MOSFET on.
2. Drain (D): The terminal through which the current flows out when the device is on.
3. Source (S): The terminal through which the current enters when the device is on.
The remaining pins may include additional features for improved performance or reliability in specific applications. The STP110N8F6 is known for its low on-resistance and high-speed switching capabilities, making it a popular choice in various electronic circuits.
Manufacturer
Application
Equivalent
1. IRF110N8
2. FQP110N8
3. NTD110N8
4. BSS110N8
5. LSN110N8
Check datasheets for specifications to ensure compatibility in your application.
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Zahlungen
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