STP120N4F6

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STP120N4F6

MOSFET N-CH 40V 80A TO220AB

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Spezifikationen

Package Tube
Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 80A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.3mOhm @ 40A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 65 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3850 pF @ 25 V
PowerDissipation(Max) 110W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Übersicht

Description

The STP120N4F6 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power applications. It is part of the STMicroelectronics family of MOSFETs, known for their low on-resistance and high-speed switching capabilities. The device features a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of 120A, making it suitable for applications such as power management, motor control, and DC-DC converters.
The STP120N4F6 is characterized by its low R_DS(on), which reduces power loss and heat generation during operation. Its fast switching times enhance performance in applications requiring rapid signal changes. The MOSFET also has built-in protection features, ensuring reliability under various operating conditions.
Overall, the STP120N4F6 is ideal for designers seeking efficient and robust solutions in power electronics, contributing to improved energy efficiency and system performance.

Features

The STP120N4F6 is an N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (VDS) of 40V.
2. Current Rating: Continuous drain current (ID) of 120A, making it suitable for high-current applications.
3. RDS(on): Low on-resistance (RDS(on)) of approximately 4.6 mΩ at a gate-source voltage (VGS) of 10V, which enhances efficiency by minimizing conduction losses.
4. Gate Threshold Voltage: VGS(th) typically ranges from 2V to 4V, allowing for effective switching in low-voltage applications.
5. Fast Switching Speed: Designed for quick turn-on and turn-off, suitable for high-frequency applications.
6. Thermal Performance: The device features a robust thermal package that aids in heat dissipation, supporting reliable operation in demanding environments.
7. Applications: Commonly used in power management, DC-DC converters, motor drives, and other switching applications.
Overall, the STP120N4F6 is an efficient and versatile MOSFET ideal for modern power electronics.

Package

The STP120N4F6 is typically packaged in a TO-220 format. This package type is known for its excellent thermal performance and is commonly used for power transistors, providing efficient heat dissipation in electronic circuits.

Pinout

The STP120N4F6 is a N-channel MOSFET from STMicroelectronics, designed for power applications. It features a total of three pins:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.

2. Drain (D): This pin is where the load is connected, allowing current to pass through the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the load, completing the circuit.
The STP120N4F6 is characterized by a low on-resistance and high current-carrying capability, making it suitable for various applications including motor control, power management, and switching regulators. Always refer to the manufacturer's datasheet for detailed specifications and recommended operating conditions.

Manufacturer

The STP120N4F6 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in a wide range of electronic components and solutions, including microcontrollers, sensors, power management devices, and automotive integrated circuits. The company is known for its focus on innovation and sustainability, serving various markets such as automotive, industrial, personal electronics, and communication. STMicroelectronics is a key player in the semiconductor industry, contributing to advancements in technology and supporting a diverse array of applications.

Application

The STP120N4F6 is a high-performance N-channel MOSFET primarily used in applications such as power supplies, DC-DC converters, motor drives, and industrial automation. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power management in consumer electronics, renewable energy systems, and electric vehicles. Additionally, it is utilized in RF amplifiers and other high-frequency applications.

Equivalent

The STP120N4F6 is a N-channel MOSFET. Equivalent products include the IRF120, BUK7M120-55, and FQP120N4. Always check the datasheets for specific parameters like voltage, current rating, RDS(on), and packaging to ensure compatibility.

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