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STP12N120K5
MOSFET N-CH 1200V 12A TO220
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- Fr. Teil #STP12N120K5
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- Datenblatt STP12N120K5 DataSheet
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Spezifikationen
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ K5 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 12A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 690mOhm @ 6A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 44.2 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1370 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Übersicht
Description
Key specifications include a low on-resistance (R_DS(on)), which enhances efficiency by reducing power losses during operation. The device also has a fast switching speed, allowing it to operate effectively in high-frequency applications. The STP12N120K5 is housed in a TO-220 package, facilitating thermal management and providing good heat dissipation.
Typical applications for this MOSFET include power supplies, motor drivers, and converters, where reliable performance and efficiency are crucial. Overall, the STP12N120K5 is an excellent choice for engineers seeking robust and efficient solutions in high-voltage environments.
Features
1. Voltage Rating: It has a breakdown voltage of 120V, suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current of up to 12A, providing robust performance in power applications.
3. RDS(on): The on-state resistance is low (typically around 0.5Ω at VGS = 10V), which helps in reducing power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2V to 4V, allowing for efficient switching.
5. Package Type: It is available in a TO-220 package, facilitating easy heat dissipation and thermal management.
6. Applications: Suitable for use in switching power supplies, motor drivers, and other high-efficiency power management systems.
Overall, the STP12N120K5 is designed for high-performance and efficiency in various electronic applications.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Voltage applied to the gate terminal turns the device on or off.
2. Drain (D): This pin connects to the load and is where the current flows out of the MOSFET when it is in the 'on' state.
3. Source (S): This pin serves as the reference point for the current flow and is typically connected to ground in common-source configurations.
The STP12N120K5 is designed for high-voltage applications (with a maximum drain-source voltage of 120V) and supports high current levels (up to 12A), making it suitable for various power switching applications.
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