STP13NM60N

Bilder sind nur zur Referenz

STP13NM60N

MOSFET N-CH 600V 11A TO220-3

100% Original und Neu

24 Stunden bereit zum Versand

365 Tage Garantie

RFQ & Erhalten Sie mehr Rabatte

Spezifikationen

Series MDmesh™ II
Part Status Active
Base Product Number STP13
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 50 V
Power Dissipation (Max) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package TO-220-3
Packaging Tube

Übersicht

Description

The STP13NM60N is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage and high-current applications. It has a breakdown voltage of 600 volts and a continuous drain current rating of 13 amps, making it suitable for switching and amplification tasks in power electronics. The device features low on-resistance (Rds(on)) for efficient operation, reducing power loss during conduction.
Key specifications include:
- V_DS (Drain-Source Voltage): 600V
- I_D (Continuous Drain Current): 13A
- R_ds(on): 0.18 Ω (typical)
- Gate-Source Voltage (V_GS): ±20V
- Package Type: TO-220
The STP13NM60N is ideal for applications such as power supplies, motor control, and other power management circuits. Its robustness and efficiency make it a common choice in industrial and consumer electronics. Proper heat management is essential for optimal performance in high-load scenarios.

Features

The STP13NM60N is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 600V.
2. Current Rating: Continuous drain current (I_D) is rated at 13A, making it suitable for various power applications.
3. R_DS(on): Low on-resistance of approximately 0.18 ohms at V_GS = 10V, which helps reduce conduction losses.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, allowing for easy drive from microcontrollers and other low-voltage logic.
5. Package Type: Available in a TO-220 package, which aids in effective heat dissipation.
6. Fast Switching: Designed for efficient switching in power conversion applications.
7. Applications: Commonly used in switch-mode power supplies, motor drives, and high-voltage converters.
These features make the STP13NM60N a versatile choice for industrial and consumer applications where high efficiency and reliability are crucial.

Package

The STP13NM60N is typically packaged in a TO-220 package type. This package is designed for power applications, providing efficient thermal management and easy mounting on heatsinks.

Pinout

The STP13NM60N is a N-channel MOSFET with a total of 3 pins. Its pin configuration and functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D) - This pin connects to the load and is where the current flows out of the MOSFET when it is in the on state.
3. Source (S) - This pin is connected to the ground or the negative side of the supply voltage. It receives the current when the device is turned on.
The STP13NM60N is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a continuous drain current of 13A. It is commonly used in switching applications, power management, and motor control.

Manufacturer

The STP13NM60N is manufactured by STMicroelectronics, a global semiconductor company. Founded in 1987, STMicroelectronics specializes in the design, development, and production of a wide range of semiconductor solutions, including microcontrollers, sensors, power management ICs, and discrete components. The company serves various industries such as automotive, consumer electronics, industrial applications, and telecommunications. With a strong focus on innovation and sustainability, STMicroelectronics plays a significant role in advancing technology for a connected world.

Application

The STP13NM60N is a N-channel MOSFET used in various applications including power supplies, motor control, and lighting systems. Its high voltage and current ratings make it suitable for switch-mode power supplies, inverters, and DC-DC converters. Additionally, it is utilized in industrial automation, consumer electronics, and automotive applications for efficient switching and amplification.

Equivalent

The STP13NM60N is a 600V, 13A N-channel MOSFET. Equivalent products include:
1. IRF840
2. STP16NM60
3. FQP13N60
4. MTP13N60
5. P16N60
Ensure to check datasheets for specific electrical characteristics and package compatibility.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

Die Zahlungsfrist ist 100% Prepaid.

Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:

1. PayPal

2. Kredit- / Debitkarte

3. Überweisung

Ähnliche