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STP20NM50
MOSFET N-CH 500V 20A TO220AB
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- Fr. Teil #STP20NM50
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- Datenblatt STP20NM50 DataSheet
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Spezifikationen
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 250mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 56 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1480 pF @ 25 V |
| PowerDissipation(Max) | 192W (Tc) |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Übersicht
Description
Key specifications include a low on-resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation. The STP20NM50 also provides fast switching speeds, making it ideal for high-frequency applications. Its robust construction allows for reliable performance in demanding environments.
The device typically comes in a TO-220 package, facilitating easy heat dissipation and mounting. It is important to consider thermal management in circuit design to ensure optimal performance and longevity of the MOSFET.
Overall, the STP20NM50 is a popular choice among engineers for its balance of high voltage, current capabilities, and efficiency, making it a versatile component in power electronics.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 20A, allowing it to handle significant load currents.
3. On-Resistance: It features a low on-resistance (R_DS(on)) of approximately 0.2Ω at a gate-source voltage (V_GS) of 10V, which enhances efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 2V and 4V, making it easier to drive.
5. Package Type: It is typically available in a TO-220 package, facilitating heat dissipation in power applications.
6. Fast Switching: The device is optimized for fast switching speeds, suitable for applications like switch-mode power supplies and inverters.
These characteristics make the STP20NM50 a versatile choice for various power management tasks in industrial and consumer electronics.
Package
Pinout
1. Gate (G): Controls the MOSFET's on/off state. A positive voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): The terminal through which the main current flows out of the MOSFET.
3. Source (S): The terminal through which the main current enters the MOSFET.
4. Body Diode (integrated): Provides a path for current in the reverse direction, useful in applications like switching power supplies.
The STP20NM50 is designed for high-voltage applications, with a maximum drain-source voltage of 500V and a continuous drain current rating of 20A. Its low on-resistance (R_DS(on)) facilitates efficient power management in circuits.
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Zahlungen
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