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STP20NM60FD
MOSFET N-CH 600V 20A TO220AB
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- Fr. Teil #STP20NM60FD
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- Datenblatt STP20NM60FD DataSheet
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Spezifikationen
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | FDmesh™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 290mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 37 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 25 V |
| PowerDissipation(Max) | 192W (Tc) |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Übersicht
Description
With a fast switching speed, the STP20NM60FD is ideal for use in switch-mode power supplies (SMPS), motor drives, and other power conversion systems. It comes in a TO-220 package, allowing for effective heat dissipation. The MOSFET is designed to operate efficiently over a wide temperature range and is protected against thermal runaway.
Overall, the STP20NM60FD is a reliable choice for engineers seeking robust and efficient solutions in power electronics.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (Vds) of 600V.
2. Current Handling: Continuous drain current (Id) of 20A, making it suitable for high-power applications.
3. On-Resistance (Rds(on)): Low on-resistance of 0.25 ohms (at Vgs = 10V), which enhances efficiency by reducing power loss.
4. Gate Threshold Voltage (Vgs(th)): Typically around 2-4V, allowing for efficient switching at lower gate voltages.
5. Fast Switching: Optimized for fast switching speeds, which is crucial in high-frequency applications.
6. Thermal Performance: Features a maximum junction temperature of 150°C, ensuring reliability under thermal stress.
7. Package Type: Available in a TO-220 package, providing effective heat dissipation.
Overall, the STP20NM60FD is ideal for applications requiring high voltage and efficiency.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the main current flows from the source to the load. It connects to the higher voltage side of the circuit.
3. Source (S): This pin is connected to the ground or the lower voltage side of the circuit. It serves as the return path for current.
4. Drain (D): Often represented twice in schematics, this is a standard designation for the drain pin, reinforcing its importance in the design.
5. Source (S): Similar to the drain, this may appear multiple times in various configurations, emphasizing the source's role in handling current.
The STP20NM60FD is designed for high-voltage applications, capable of handling a maximum drain-source voltage (V_DS) of 600V and continuous drain current (I_D) of 20A.
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