STP25NM60ND

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STP25NM60ND

MOSFET N-CH 600V 21A TO220AB

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Spezifikationen

Series FDmesh™ II
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 50 V
Power Dissipation (Max) 160W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP25N

Übersicht

Description

The STP25NM60ND is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high voltage and current applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 25A at a case temperature of 25°C. The device is particularly well-suited for power switching applications, including motor control, power converters, and inverters.
Key specifications include a low on-state resistance (Rds(on)), which enhances its efficiency by minimizing power losses during operation. The STP25NM60ND also has a fast switching capability, making it suitable for high-frequency applications. Its thermal management can be optimized with a TO-220 package, allowing for effective heat dissipation.
Additionally, the MOSFET is designed to be easily driven by standard gate voltages, simplifying circuit designs. Overall, the STP25NM60ND is a reliable choice for engineers seeking robust performance in demanding electronic applications.

Features

The STP25NM60ND is a N-channel MOSFET that features a maximum drain-source voltage (Vds) of 600V, a continuous drain current (Id) of 25A, and a low on-resistance (RDS(on)) of approximately 0.25 ohms at 10V gate voltage. It is designed for applications in switch-mode power supplies, motor control, and other high-voltage circuits.
Key features include:
- High Voltage Rating: 600V allows for use in high-voltage applications.
- Low On-Resistance: Ensures efficient power handling and minimal heat generation.
- Fast Switching Speed: Suitable for high-frequency applications.
- Gate Threshold Voltage (Vgs(th)): Ranges from 2V to 4V, enabling easy interfacing with low-voltage control circuits.
- Package Type: Available in TO-220, making it easy to integrate into various designs.
Overall, the STP25NM60ND is a versatile component ideal for power management solutions in various electronic devices.

Package

The STP25NM60ND is a N-channel MOSFET packaged in a TO-220 format. This package type provides efficient heat dissipation and is commonly used in power applications.

Pinout

The STP25NM60ND is an N-channel MOSFET with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here determines if the MOSFET is on or off.
2. Drain (D): This pin connects to the load and is where the current flows out of the MOSFET when it is in the on-state.
3. Source (S): This pin connects to ground or the lower potential in the circuit. It serves as the reference point for the voltage applied to the gate.
The STP25NM60ND is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a continuous drain current of up to 25A. It is commonly used in power supply circuits, motor control, and other applications requiring efficient switching.

Manufacturer

The STP25NM60ND is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of electronic components, including power transistors, microcontrollers, sensors, and integrated circuits. Founded in 1987 and headquartered in Geneva, Switzerland, the company serves various markets, including automotive, industrial, personal electronics, and communication. STMicroelectronics is known for its innovative solutions and commitment to sustainability in the electronics industry.

Application

The STP25NM60ND is a N-channel MOSFET commonly used in power electronics applications. Its areas of application include DC-DC converters, motor control circuits, power management systems, and switch-mode power supplies (SMPS). It is suitable for high-voltage and high-current applications due to its low on-resistance and high switching speed, making it ideal for automotive, industrial, and consumer electronics.

Equivalent

The STP25NM60ND is a N-channel MOSFET with a voltage rating of 600V and a continuous drain current of 25A. Equivalent products include the IRFHC25N60, IXFH25N60, and MTP25N60. Always verify specifications such as V_DS, I_D, R_DS(on), and package type to ensure compatibility for your specific application.

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