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STP34NM60N
MOSFET N-CH 600V 29A TO220-3
- Hersteller
- Fr. Teil #STP34NM60N
- Paket TO-220
- Datenblatt STP34NM60N DataSheet
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Spezifikationen
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 29A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 105mOhm @ 14.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 80 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2722 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Übersicht
Description
Key features of the STP34NM60N include a low on-resistance (R_DS(on)), which minimizes power losses during operation, and a fast switching speed, allowing for efficient control in high-frequency applications. Its thermal resistance characteristics enable effective heat dissipation, ensuring reliability and performance.
The device is housed in a TO-220 package, facilitating easy heatsinking and mounting in various applications. It is ideal for designers looking for a reliable component for energy-efficient systems operating at high voltages.
Features
1. Voltage Rating: 600V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous current capacity of 34A at 25°C.
3. R_DS(on): Low on-resistance, typically around 0.34 ohms, which reduces conduction losses.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling efficient drive with standard logic levels.
5. Package Type: Available in TO-220 and DPAK packages, allowing for easy heatsinking and thermal management.
6. Fast Switching: Suitable for high-frequency applications, enhancing performance in switching power supplies and motor control.
7. Thermal Resistance: Offers a low thermal resistance junction-to-case, facilitating better heat dissipation.
These features make the STP34NM60N ideal for applications like power converters, inverters, and other high-voltage switching tasks.
Package
Pinout
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here regulates the flow of current between the drain and source.
2. Drain (D) - This is the terminal through which current enters the MOSFET when it is in the "on" state.
3. Source (S) - This terminal allows current to exit the MOSFET when it is conducting.
The STP34NM60N is designed for high-voltage applications, rated at 600V and capable of handling continuous current up to 34A. It is commonly used in power management, switching applications, and as a part of power conversion circuits.
Manufacturer
Application
Equivalent
1. IRF3205
2. FQP30N60
3. STP30NF06
4. MTP30N60
5. APT30M60J
Ensure to check specifications such as voltage rating, current rating, and package type for compatibility.
Versand
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Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
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