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STP4NK60Z
MOSFET N-CH 600V 4A TO220AB
- Hersteller
- Fr. Teil #STP4NK60Z
- Paket TO-220
- Datenblatt STP4NK60Z DataSheet
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Spezifikationen
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 4A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2Ohm @ 2A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 26 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 510 pF @ 25 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Übersicht
Description
This MOSFET features a low on-state resistance (R_DS(on)), which results in efficient power conversion and reduced heat generation during operation. Its fast switching speed makes it suitable for high-frequency applications. The device is housed in a TO-220 package, ensuring good thermal performance and easy mounting on heat sinks.
Key parameters include a gate threshold voltage (V_GS(th)) typically between 2-4V, ensuring compatibility with low-voltage drive circuits. The STP4NK60Z is a reliable choice for engineers seeking robust performance in high-voltage environments.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 4A.
3. On-Resistance: Low on-resistance (R_DS(on)) of 0.5 ohms at V_GS = 10V, which helps reduce power losses during operation.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, allowing for efficient control and switching.
5. Fast Switching Speed: Optimized for high-frequency applications, improving efficiency in power conversion.
6. Package Type: Available in a TO-220 package, facilitating heat dissipation and ease of mounting.
These features make the STP4NK60Z suitable for applications in power supplies, motor drives, and other electronic devices that require reliable switching performance and efficiency.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's switching function. Applying a voltage to this gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the current flows out of the MOSFET. It connects to the load.
3. Source (S): This pin is the terminal through which current enters the MOSFET. It is typically connected to ground in low-side switching applications.
4. Body Diode: Although not a pin, the internal body diode allows current to flow from the source to the drain when the device is reverse biased.
The STP4NK60Z is designed for applications like power management and switching in various electronic devices, offering high voltage and current handling capabilities.
Manufacturer
Application
Equivalent
1. IRF740
2. FQPF4N60
3. AUIRF840
4. MTP4N60E
5. STP4N60
Always check the datasheets for specific ratings and characteristics to ensure compatibility in your application.
Versand
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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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