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STP4NK60ZFP
MOSFET N-CH 600V 4A TO220FP
- Hersteller
- Fr. Teil #STP4NK60ZFP
- Paket TO-220FP
- Datenblatt STP4NK60ZFP DataSheet
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Spezifikationen
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 4A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2Ohm @ 2A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 26 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 510 pF @ 25 V |
| PowerDissipation(Max) | 25W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
Übersicht
Description
This MOSFET is suitable for various applications, including switch-mode power supplies, motor drives, and DC-DC converters. Its TO-220 package type helps with heat dissipation, making it ideal for demanding thermal environments. The STP4NK60ZFP's high switching speed and robustness make it a reliable choice for circuit designs requiring reliable performance under high load conditions.
Overall, the STP4NK60ZFP is a versatile component that combines high performance with efficiency, catering to a wide range of industrial and consumer electronic applications.
Features
- Voltage Rating: 600V, suitable for high-voltage applications.
- Current Rating: 4A continuous drain current, providing efficient performance.
- RDS(on): Low on-resistance (typically 0.7Ω at VGS = 10V), which reduces conduction losses.
- Gate Threshold Voltage: Low gate threshold (2-4V), enabling easy drive with standard logic levels.
- Package Type: TO-220, facilitating effective heat dissipation and simple mounting on heatsinks.
- Fast Switching: Designed for quick switching operations, making it ideal for applications such as power supplies and inverters.
Overall, the STP4NK60ZFP is characterized by its robustness, efficiency, and versatility in high-voltage applications.
Package
Pinout
1. Gate (G) - Controls the MOSFET's operation, turning it on or off by applying a voltage.
2. Drain (D) - Connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S) - Connected to ground or a lower potential; current flows into the source when the MOSFET is on.
4. Tab (Heatsink) - Used for heat dissipation, often connected to the source for thermal management.
5. Body Diode - Internal diode between the source and drain, allowing for current flow in the reverse direction when needed.
The STP4NK60ZFP is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a continuous drain current of up to 4A.
Manufacturer
Application
Equivalent
1. IRF840
2. IRF320
3. FQP30N60
4. STP4N60
5. APT4N60
Always verify specifications such as voltage, current ratings, and package type before substituting.
Versand
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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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2. Kredit- / Debitkarte
3. Überweisung
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