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STP60NF10
MOSFET N-CH 100V 80A TO220AB
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Spezifikationen
| Series | STripFET™ II |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4270 pF @ 25 V |
| Power Dissipation (Max) | 300W (Tc) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Base Product Number | STP60 |
Übersicht
Description
Key features include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 60A, making it ideal for high-power switching applications such as in power supplies, motor drives, and DC-DC converters. The device has low on-resistance (R_DS(on)) values, which contribute to minimal power losses during operation.
Additionally, the STP60NF10 features a fast switching speed and thermal stability, which enhances its performance in demanding environments. Its compact package design ensures ease of integration into various electronic circuits. Overall, the STP60NF10 is suitable for designers seeking reliable and efficient power management solutions in their electronic systems.
Features
1. Voltage Rating: It can handle a continuous drain-source voltage (V_DS) of up to 100V.
2. Current Rating: It supports a continuous drain current (I_D) of up to 60A, making it suitable for high-power applications.
3. Low R_DS(on): The device has a low on-resistance (R_DS(on)) of approximately 0.018 ohms, ensuring minimal power loss during operation.
4. Fast Switching: With fast switching capabilities, it is ideal for applications in power supplies and motor control.
5. Thermal Performance: The MOSFET features a high maximum junction temperature of 150°C, allowing it to operate in demanding environments.
6. Package: Typically available in the TO-220 package, it offers ease of heat dissipation.
7. Applications: Commonly used in power converters, inverters, and other power electronics.
Overall, the STP60NF10 is a reliable choice for various high-efficiency power management systems.
Package
Pinout
1. Gate (G): Controls the switching of the MOSFET. A voltage applied to this pin turns the device on.
2. Drain (D): The terminal through which the current flows out. It connects to the load in a typical circuit configuration.
3. Source (S): The terminal through which the current enters the MOSFET. It is typically connected to ground in low-side switching applications.
The STP60NF10 is designed for high current applications, with a maximum continuous drain current of 60A and a maximum drain-source voltage of 100V, making it suitable for power switching applications.
Manufacturer
Application
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