STP6N95K5

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STP6N95K5

MOSFET N-CH 950V 9A TO220-3

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Spezifikationen

Supplier STMicroelectronics
Package Tube
Series SuperMESH5™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 950 V
Current-ContinuousDrain(Id)@25°C 9A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.25Ohm @ 3A, 10V
Vgs(th)(Max)@Id 5V @ 100µA
GateCharge(Qg)(Max)@Vgs 13 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 450 pF @ 100 V
PowerDissipation(Max) 90W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Übersicht

Description

STP6N95K5 is a high-voltage N-channel power MOSFET from STMicroelectronics. It’s designed for switching power stages and typically offers a drain–source voltage rating around 600 V, suitable for offline supplies, inverters, and motor drives. Built with ST’s trench MOS technology, it provides robust switching performance and avalanche ruggedness. The device handles several amperes of drain current; gate threshold is a few volts. It’s available in standard power packages (e.g., TO-220/TO-252 variants) with the usual Gate–Drain–Source pinout (verify per package). Practical use requires proper heatsinking, appropriate gate-drive voltage, and protection against dv/dt and avalanche events. For precise specs (VDS, ID, RDS(on), switching characteristics, and exact package/pinout), consult the official STMicroelectronics datasheet for STP6N95K5.

Features

STP6N95K5 is an N-channel power MOSFET for high‑voltage switching. Key features:
- 600 V, N‑channel enhancement‑mode device
- Low on‑resistance for reduced conduction losses
- Moderate gate charge for efficient switching
- Fast switching capability with controlled dv/dt
- Rugged device with robust body diode and good avalanche energy rating
- Wide operating temperature range (-55°C to +150°C)
- RoHS compliant
- Available in ST power packages (e.g., D²PAK / TO‑263, TO‑220 variants) for surface‑ or through‑hole designs
Note: For exact electrical specs (Rds(on), Id, gate threshold, packaging options), refer to the official datasheet.

Package

The STP6N95K5 is supplied in a through-hole TO-220 (3-lead) power MOSFET package.

Pinout

STP6N95K5 is a 3-pin power MOSFET (plus a metal tab). Pinout and functions:
- Pin 1: Gate — voltage input that controls the MOSFET channel.
- Pin 2: Drain — main high‑voltage terminal (also connected to the metal tab/heatsink).
- Pin 3: Source — return/current output terminal.
(The metal tab/backplate is tied to Drain for heatsinking and electrical connection.)

Manufacturer

Manufacturer: STMicroelectronics (part number STP6N95K5).
What kind of company: STMicroelectronics is a multinational semiconductor company (Franco‑Italian, headquartered in Geneva) that designs and manufactures integrated circuits, discrete power devices (like MOSFETs), microcontrollers, sensors and other electronic components.

Application

STP6N95K5 is a high‑voltage N‑channel MOSFET. Typical applications include:
- Offline switch‑mode power supplies and AC‑DC adapters
- DC‑DC converters and point‑of‑load regulators
- Motor control and drives
- Solar inverters and energy storage systems
- Uninterruptible power supplies and battery chargers
- General industrial power‑electronics and high‑voltage switching circuits

Equivalent

Do you mean the STMicroelectronics STP6N95K5 N‑channel high‑voltage MOSFET? I can list exact equivalents but need the key specs you must match (VDS, ID, RDS(on), package, switching speed/avalanche rating). Please confirm the part number or allow me to use the datasheet values (approx. VDS and current) to find direct replacements.

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