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STP6NK90ZFP
MOSFET N-CH 900V 5.8A TO220FP
- Hersteller
- Fr. Teil #STP6NK90ZFP
- Paket TO-220FP
- Datenblatt STP6NK90ZFP DataSheet
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Spezifikationen
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 900 V |
| Current-ContinuousDrain(Id)@25°C | 5.8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2Ohm @ 2.9A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 60.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1350 pF @ 25 V |
| PowerDissipation(Max) | 30W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
Übersicht
Description
The device features a TO-220 package, facilitating effective thermal management. Its high-speed switching capabilities make it ideal for applications requiring rapid turn-on and turn-off cycles. The STP6NK90ZFP is characterized by excellent thermal stability and reliability, making it a popular choice for designers seeking efficient power management solutions in industrial and consumer electronics.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 900V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of 6A, which is beneficial for various power electronics.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.6 Ω at V_GS = 10V, ensuring lower power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is between 2V to 4V, allowing for efficient switching.
5. Package Type: It comes in the TO-220 package, providing good thermal performance and ease of mounting.
6. Applications: Ideal for use in switching power supplies, motor drives, and other high-voltage applications.
Overall, the STP6NK90ZFP is designed for efficiency and reliability in demanding environments.
Package
Pinout
The pin configuration and functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the current flows out.
3. Source (S): The terminal through which current enters the MOSFET.
4. Body Diode: Integrated parasitic diode between the drain and source, allowing for current flow in the reverse direction.
This component is typically used in power management, inverters, and other high-frequency applications due to its low on-resistance (R_DS(on)) and fast switching capabilities.
Manufacturer
Application
Equivalent
Versand
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Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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