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STP80NF12
MOSFET N-CH 120V 80A TO220AB
- Hersteller
- Fr. Teil #STP80NF12
- Paket TO-220
- Datenblatt STP80NF12 DataSheet
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Spezifikationen
| Package | Tube |
| Series | STripFET™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 120 V |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 18mOhm @ 40A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 189 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4300 pF @ 25 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Übersicht
Description
The STP80NF12 is commonly used in switching power supplies, motor drivers, and other applications where high efficiency and fast switching speeds are required. It is housed in a TO-220 package, facilitating easy thermal management and heat dissipation. This MOSFET is controlled by a voltage applied to its gate, allowing for effective modulation of the current flow between the drain and source terminals.
Overall, the STP80NF12 is valued for its reliability, high current capacity, and versatility in various electronic circuits.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 120V.
2. Current Rating: Continuous drain current (I_D) of 80A at 25°C, making it suitable for high-current applications.
3. On-State Resistance: Low R_DS(on) of approximately 0.018 ohms (at V_GS = 10V), which ensures minimal power loss during operation.
4. Switching Speed: Fast switching capabilities, enhancing efficiency in applications such as power supplies and motor drives.
5. Thermal Performance: High maximum junction temperature of 175°C, allowing for reliable operation in demanding environments.
6. Package: Available in TO-220 and DPAK packages for easy integration into various circuit designs.
These features make the STP80NF12 suitable for applications like DC-DC converters, inverters, and other power electronics requiring efficient switching and handling of high power.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the circuit. It is the output for the current flowing from the drain when the MOSFET is activated.
The STP80NF12 is designed for use in power management applications, with a maximum continuous drain current of 80A and a drain-source voltage of 120V. Its low on-resistance makes it suitable for high-efficiency switching applications.
Manufacturer
Application
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Zahlungen
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