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STW24N60M2
MOSFET N-CH 600V 18A TO247
- Hersteller
- Fr. Teil #STW24N60M2
- Paket TO-247-3
- Datenblatt STW24N60M2 DataSheet
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Spezifikationen
| Package | Tube |
| Series | MDmesh™ II Plus |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 190mOhm @ 9A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 29 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1060 pF @ 100 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Übersicht
Description
This MOSFET is often used in applications such as switch-mode power supplies (SMPS), motor drivers, and other power converters. The device's fast switching capabilities and thermal performance are enhanced by its TO-220 package, allowing for effective heat dissipation.
Additionally, the STW24N60M2 is characterized by a high gate threshold voltage and can be easily driven by standard gate drivers. Its ruggedness and reliability make it a popular choice in industrial and consumer electronics. Overall, the STW24N60M2 is an excellent choice for engineers seeking reliable, efficient components for high-voltage applications.
Features
1. Voltage Rating: 600V, suitable for high-voltage power supply circuits.
2. Continuous Drain Current: Up to 24A, allowing efficient current handling in various applications.
3. RDS(on): Low on-state resistance (~0.18 ohms), which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: Typically 2-4V, facilitating easy driving with standard gate voltages.
5. Fast Switching Speed: Optimized for high-speed switching, making it suitable for power converter applications.
6. Thermal Resistance: Good thermal performance with a low junction-to-case thermal resistance, ensuring reliable operation under high temperatures.
7. TO-220 Package: Offers effective heat dissipation and ease of mounting.
These features make the STW24N60M2 ideal for applications in power supplies, inverters, and motor drives.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the current enters the MOSFET. It connects to the load.
3. Source (S): This terminal is where the current exits the MOSFET and is typically connected to ground or a lower potential in the circuit.
The STW24N60M2 is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 24A. It also features low on-resistance, making it suitable for power switch applications.
Manufacturer
Application
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