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STW34NM60N
MOSFET N-CH 600V 29A TO247-3
- Hersteller
- Fr. Teil #STW34NM60N
- Paket TO-247
- Datenblatt STW34NM60N DataSheet
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Spezifikationen
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 29A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 105mOhm @ 14.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 80 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2722 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Übersicht
Description
The device is housed in a TO-220 package, which provides good thermal performance, allowing for effective heat dissipation during operation. The STW34NM60N is suitable for applications requiring fast switching speeds and high reliability, making it ideal for synchronous rectification and inverters.
Additionally, the MOSFET is designed with a robust gate oxide structure to withstand high-voltage spikes, ensuring durability in harsh environments. Overall, the STW34NM60N is a versatile component that aids in achieving improved performance and efficiency in various electronic circuits.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 34A at a temperature of 25°C, allowing for significant power handling.
3. R_DS(on): Low on-resistance (approximately 0.34 ohms at V_GS = 10V), which minimizes power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): Range of 2 to 4V, enabling it to be driven effectively with standard logic levels.
5. Fast Switching: Suitable for high-frequency applications due to its low gate charge (Q_g), enhancing efficiency in switching operations.
6. Thermal Performance: Comes in a TO-220 package, providing good thermal dissipation capabilities.
These features make the STW34NM60N ideal for applications such as switch-mode power supplies, motor drivers, and other power management systems.
Package
Pinout
1. Gate (G): This is the control pin used to turn the MOSFET on or off by applying a voltage.
2. Drain (D): This pin connects to the load; current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin connects to the ground or the negative side of the power supply in a typical configuration.
The STW34NM60N is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 34A, making it suitable for high-voltage and high-current applications, such as power supplies, motor drives, and inverters.
Manufacturer
Application
Equivalent
1. IRFHC40
2. MTP50N60E
3. FQP50N60
4. IXFH34N60P
Always verify specifications like voltage, current, and Rds(on) before substitution.
Versand
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von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
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