STW36N60M6

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STW36N60M6

MOSFET N-CHANNEL 600V 30A TO247

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  • Fr. Teil #STW36N60M6
  • Paket TO-247
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Spezifikationen

Package Tube
Series MDmesh™ M6
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 30A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 99mOhm @ 15A, 10V
Vgs(th)(Max)@Id 4.75V @ 250µA
GateCharge(Qg)(Max)@Vgs 44.3 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1960 pF @ 100 V
PowerDissipation(Max) 208W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Übersicht

Description

The STW36N60M6 is a high-voltage N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 600 volts and a continuous drain current (I_D) of 36 amps, making it suitable for use in switch-mode power supplies, motor drives, and lighting applications. The device boasts low on-resistance (R_DS(on)), which minimizes conduction losses and improves efficiency, particularly in high-frequency operations.
The MOSFET employs a trench technology that enhances performance and thermal stability. Its gate threshold voltage (V_GS(th)) typically ranges between 2 to 4 volts, allowing for effective control with standard logic levels. The STW36N60M6 also has fast switching speeds, which reduce switching losses and improve overall circuit performance.
This device is packaged in a TO-220 or similar form factor, facilitating efficient heat dissipation. Overall, the STW36N60M6 is a versatile component ideal for engineers looking to optimize power management in various electronic systems.

Features

The STW36N60M6 is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage (Vds), suitable for high-voltage systems.
2. Current Rating: Continuous drain current (Id) of 36A, allowing for robust power handling.
3. RDS(on): Low on-resistance of approximately 0.12Ω at Vgs = 10V, resulting in minimal conduction losses.
4. Gate Threshold Voltage (Vgs(th)): Ranges from 2V to 4V, facilitating easy drive with logic-level signals.
5. Fast Switching: High-speed operation due to low gate charge (Qg), enhancing efficiency in switching applications.
6. Package Type: Available in a TO-247 package, providing excellent thermal performance and ease of mounting.
7. Applications: Suitable for power supplies, motor drives, and other high-efficiency applications.
These features make the STW36N60M6 an excellent choice for demanding power applications, ensuring reliability and efficiency.

Package

The STW36N60M6 is packaged in a TO-247 package type, which is a high-power, insulated package designed for efficient heat dissipation and robust performance in applications like power switching and converters.

Pinout

The STW36N60M6 is a MOSFET transistor from STMicroelectronics. It features a total of 3 pins.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin allows the transistor to conduct.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the circuit, completing the circuit when the MOSFET is activated.
The STW36N60M6 is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 36A, making it suitable for power switching applications.

Manufacturer

The STW36N60M6 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products, including microcontrollers, sensors, power management devices, and power transistors. The company serves various industries, such as automotive, industrial, consumer electronics, and telecommunications. With a strong focus on innovation and sustainability, STMicroelectronics is known for its commitment to developing advanced technologies that enhance energy efficiency and reduce environmental impact.

Application

The STW36N60M6 is a high-voltage MOSFET suitable for various applications, including power supplies, motor drives, and industrial equipment. It is commonly used in switch-mode power supplies (SMPS), DC-DC converters, and inverters for renewable energy systems. Its high efficiency and fast switching capabilities make it ideal for applications requiring reliable power management and thermal performance.

Equivalent

The STW36N60M6 is a high voltage N-channel MOSFET. Equivalent products include:
1. Infineon IXFH36N60P
2. ON Semiconductor MTP36N60E
3. Vishay SIL36N60
4. Nexperia PSMN2R6-60BSF
Always check the datasheets for specific ratings and characteristics to ensure compatibility for your application.

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