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STW40N95K5
MOSFET N-CH 950V 38A TO247
- Hersteller
- Fr. Teil #STW40N95K5
- Paket TO-247-3
- Datenblatt STW40N95K5 DataSheet
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Spezifikationen
| Package | Tube |
| Series | MDmesh™ K5 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 950 V |
| Current-ContinuousDrain(Id)@25°C | 38A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 130mOhm @ 19A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 93 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 3300 pF @ 100 V |
| PowerDissipation(Max) | 450W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Übersicht
Description
Key specifications include a maximum gate-source voltage of ±20V, a total gate charge (Q_g) for drive consideration, and a fast switching speed, making it suitable for use in applications such as switch-mode power supplies (SMPS), inverters, and motor drives. The STW40N95K5 comes in a TO-220 package, allowing for effective heat dissipation. Its robustness and thermal performance make it a popular choice in high-power applications requiring reliability and efficiency.
For designers, understanding the electrical characteristics and thermal limitations is crucial for optimizing circuit performance and ensuring device longevity.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 950V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (Id) of 40A at a temperature of 25°C, providing robust performance under load.
3. On-Resistance (Rds(on)): It offers a low on-resistance of around 0.55 ohms, which enhances efficiency by reducing conduction losses during operation.
4. High-Speed Switching: The MOSFET is designed for fast switching speeds, making it ideal for applications like switch-mode power supplies and converters.
5. Gate Threshold Voltage: It features a gate threshold voltage (Vgs(th)) between 2V to 4V, allowing for easy interfacing with standard control circuits.
6. Package Type: Typically available in a TO-220 package, facilitating heat dissipation and easy mounting.
Overall, the STW40N95K5 is well-suited for high-voltage and high-efficiency applications in various electronic circuits.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current enters the MOSFET. It connects to the load in a typical application.
3. Source (S): This pin is where the current exits the MOSFET, typically connected to ground or the negative side of the power supply.
The STW40N95K5 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 950V and a continuous drain current (I_D) of 40A. It is commonly used in power supplies, motor drives, and other high-voltage switching applications.
Manufacturer
Application
Equivalent
1. MPS40N95 - from MPS
2. IRF840 - from Infineon
3. FQP40N95 - from ON Semiconductor
4. SCT40N95 - from Infineon
Always verify specifications such as V_ds, I_d, R_ds(on), and package type to ensure compatibility in your application.
Versand
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Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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