STW43NM60ND

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STW43NM60ND

MOSFET N-CH 600V 35A TO247-3

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Spezifikationen

Series FDmesh™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 50 V
Power Dissipation (Max) 255W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number STW43N

Übersicht

Description

The STW43NM60ND is a high-voltage N-channel MOSFET designed for power switching applications. With a voltage rating of 600V and a continuous current rating of 43A, it is suitable for use in various power electronics applications, including switching power supplies, motor drives, and industrial equipment.
Key features include a low on-resistance (R_ds(on)), which enhances efficiency by minimizing power loss, and fast switching speeds that improve overall performance. The device is housed in a TO-220 package, facilitating effective heat dissipation.
The STW43NM60ND is characterized by its high thermal stability and reliability, making it suitable for demanding environments. Its gate threshold voltage is optimized for compatibility with standard drive circuits, ensuring ease of integration into existing designs.
Overall, the STW43NM60ND is a robust choice for engineers seeking efficient and reliable MOSFET solutions in high-voltage applications.

Features

The STW43NM60ND is a high-voltage N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 600V.
2. Current Rating: Continuous drain current (I_D) of 43A at a case temperature of 25°C.
3. R_DS(on): Low on-state resistance, typically around 0.14Ω, which minimizes conduction losses.
4. Gate Threshold Voltage (V_GS(th)): Ranges from 2V to 4V, ensuring efficient driving.
5. Fast Switching Speed: Suitable for high-frequency applications, enhancing performance in switching power supplies.
6. TO-220 Package: Provides effective thermal management for heat dissipation.
7. Applications: Ideal for use in switch-mode power supplies, motor drives, and other high-voltage applications.
Overall, the STW43NM60ND is optimized for efficiency and reliability in high-power environments.

Package

The STW43NM60ND is typically packaged in a TO-247 casing, which is a power transistor package designed for high-power applications.

Pinout

The STW43NM60ND is an N-channel MOSFET with a total of 3 pins. Its pin configuration and functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage between the gate and source allows the MOSFET to turn on and conduct current from drain to source.

2. Drain (D) - This pin connects to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S) - This pin is connected to ground or the lower potential in the circuit. It serves as the reference point for the gate voltage.
The STW43NM60ND is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 43A. It is commonly used in power electronics applications, such as inverters, motor drives, and power supplies.

Manufacturer

The STW43NM60ND is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and manufactures a wide range of electronic components, including integrated circuits and discrete devices, serving various sectors such as automotive, industrial, consumer electronics, and telecommunications. The company is known for its focus on innovation and sustainability, providing solutions that enhance energy efficiency and performance in electronic applications. STMicroelectronics operates worldwide, with a strong emphasis on research and development to advance semiconductor technology.

Application

The STW43NM60ND is a high-voltage, N-channel power MOSFET primarily used in applications such as switch-mode power supplies, motor control, and industrial automation. Its features make it suitable for high-frequency switching, energy-efficient designs, and power converters in various electronic devices. Additionally, it can be employed in renewable energy systems, such as solar inverters, and in electric vehicle (EV) power management systems.

Equivalent

The STW43NM60ND is a 600V N-channel MOSFET. Equivalent products include the IRF840, IPP60R190P6, and FQPF9N60. Additionally, the MCP6004 and MTP60N06E are also compatible options. Always check the datasheets for detailed specifications and ensure they meet your application requirements.

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