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STW48NM60N
MOSFET N-CH 600V 44A TO247
- Hersteller
- Fr. Teil #STW48NM60N
- Paket TO-247-3
- Datenblatt STW48NM60N DataSheet
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Spezifikationen
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 44A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 70mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 124 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 4285 pF @ 50 V |
| PowerDissipation(Max) | 330W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Übersicht
Description
Key specifications include a maximum gate-source voltage (V_GS) of ±20V and a fast switching capability, making it suitable for high-frequency applications. With a maximum junction temperature of 150°C, it offers reliability in demanding environments. The STW48NM60N's characteristics enable designers to achieve greater efficiency and performance in their circuits. Overall, it is a preferred choice for engineers looking to enhance the efficiency of their power management systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle up to 48A of continuous drainage, allowing for substantial current flow in circuits.
3. Low On-Resistance: The on-resistance (Rds(on)) is approximately 0.24 ohms at Vgs = 10V, which minimizes power losses and improves efficiency.
4. Fast Switching: The device supports fast switching capabilities, making it ideal for applications like switch-mode power supplies and inverters.
5. Thermal Performance: It comes in a TO-247 package that allows for efficient heat dissipation, crucial for maintaining performance in high-power applications.
6. Body Diode: The integrated body diode provides efficient reverse recovery characteristics, enhancing overall circuit performance.
These features make the STW48NM60N suitable for various applications, including automotive, industrial, and consumer electronics.
Package
Pinout
1. Gate (G): This is the control pin used to turn the MOSFET on or off. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the load current flows into the device. It connects to the high side of the load in a switching configuration.
3. Source (S): This pin is the output side where the current flows out of the MOSFET, typically connected to ground or the negative side of the load.
The STW48NM60N is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 48A. It is commonly used in power management and switching applications.
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