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STW62N65M5
MOSFET N-CH 650V 46A TO247
- Hersteller
- Fr. Teil #STW62N65M5
- Paket TO-247-3
- Datenblatt STW62N65M5 DataSheet
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Spezifikationen
| Package | Tube |
| Series | Automotive, AEC-Q101, MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 46A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 49mOhm @ 23A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 142 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 6420 pF @ 100 V |
| PowerDissipation(Max) | 330W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
Übersicht
Description
The STW62N65M5 is built using STMicroelectronics' proprietary technology, ensuring fast switching speeds and improved thermal performance. It's commonly used in applications such as switch-mode power supplies (SMPS), motor drives, and other high-voltage switching applications.
Key parameters include a gate threshold voltage (V_GS(th)) range of 2-4V, allowing for easy integration into various circuits. The MOSFET is available in a TO-220 package, facilitating robust thermal management and mounting options. Overall, the STW62N65M5 is a reliable choice for designers seeking efficient and high-performance power solutions.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, suitable for demanding environments.
2. Continuous Drain Current: The device can handle up to 62A of continuous current at a temperature of 25°C, providing high efficiency in power applications.
3. R_DS(on): It offers a low on-resistance of 0.17Ω, which minimizes conduction losses and improves thermal performance.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from 2V to 4V, ensuring reliable switching.
5. Fast Switching: Designed for efficient switching frequencies, it reduces switching losses in applications like SMPS and motor drives.
6. Package Type: Available in a TO-247 package, which provides good thermal dissipation capabilities.
Overall, the STW62N65M5 is ideal for power management applications requiring high efficiency and reliability.
Package
Pinout
1. Gate (G): Controls the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): The terminal through which the current flows out when the MOSFET is on.
3. Source (S): The terminal through which the current enters when the MOSFET is on; typically connected to the ground in low-side switching applications.
4. Body Diode: Integrated within the structure, allowing current to flow in the reverse direction when the MOSFET is off, useful for certain applications.
5. Heatsink Tab: Not a pin but often included in the package for thermal management.
The STW62N65M5 is rated for a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 62A, making it suitable for power conversion and motor control applications.
Manufacturer
Application
Equivalent
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