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STW69N65M5-4
MOSFET N-CH 650V 58A TO247-4L
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- Fr. Teil #STW69N65M5-4
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- Datenblatt STW69N65M5-4 DataSheet
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Spezifikationen
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 58A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 45mOhm @ 29A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 143 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 6420 pF @ 100 V |
| PowerDissipation(Max) | 330W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-4L |
Übersicht
Description
This MOSFET can handle a maximum drain-source voltage (VDS) of 650V and offers a continuous drain current (ID) of up to 69A, making it suitable for high-power applications such as converters, industrial drives, and consumer electronics. Its low gate charge (Qg) facilitates faster switching, contributing to improved performance in high-frequency applications.
The device features a TO-220 package, which aids in effective heat dissipation. The STW69N65M5-4 is ideal for engineers seeking reliable and efficient components for power management systems.
For specific applications, proper thermal management and gate drive considerations are essential to ensure optimal performance and longevity.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 650V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 69A, making it capable of handling significant loads.
3. Low On-Resistance: R_DS(on) is typically 0.14 ohms, which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: Designed for enhanced switching performance, ideal for applications like power supplies and motor control.
5. Thermal Performance: Built with a TO-220 package, providing good thermal dissipation characteristics.
6. Gate Threshold Voltage: V_GS(th) in the range of 2V to 4V, allowing for easy drive with standard control voltages.
7. Built-in Protection: Features like avalanche rating for improved reliability in transient conditions.
These attributes make the STW69N65M5-4 suitable for use in industrial, consumer, and automotive applications where efficiency and thermal management are crucial.
Package
Pinout
1. Gate (G): Controls the MOSFET's on/off state. A voltage applied to this pin turns the device on.
2. Drain (D): The output pin where the load is connected. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or a lower potential in the circuit.
Additionally, it features a low R_DS(on) for efficient operation, making it suitable for applications in power supplies and motor control. The device is rated for a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of up to 69A, providing robust performance in high-voltage applications.
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Application
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