STW70N60DM2

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STW70N60DM2

MOSFET N-CH 600V 66A TO247

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Spezifikationen

Package Tube
Series MDmesh™ DM2
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 66A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 42mOhm @ 33A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 121 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 5508 pF @ 100 V
PowerDissipation(Max) 446W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Übersicht

Description

The STW70N60DM2 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 70A, making it suitable for high-voltage and high-current applications.
Key characteristics include a low on-state resistance (R_DS(on)), typically around 0.18 ohms, which enhances efficiency by minimizing power losses during operation. The device is optimized for switching applications, offering fast switching times and high-speed operation, which is essential in power supply circuits, motor drives, and inverters.
The STW70N60DM2 is housed in a TO-220 package, facilitating effective heat dissipation, crucial for maintaining performance under load. It is commonly used in industrial applications, renewable energy systems, and consumer electronics due to its robustness and reliability. Overall, it is an excellent choice for engineers seeking efficient power management solutions.

Features

The STW70N60DM2 is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current of 70A.
3. On-Resistance: Low on-resistance of approximately 0.065Ω at V_GS = 10V, ensuring efficient operation and reduced power loss.
4. Gate Threshold Voltage: V_GS (th) ranges from 2V to 4V, allowing for easy drive with standard logic levels.
5. Switching Performance: Fast switching capabilities suitable for high-frequency applications.
6. Thermal Resistance: Low thermal resistance to aid in heat dissipation, which is crucial for reliability.
7. Package Type: Available in TO-220 and DPAK packages, facilitating easy mounting and heat sink attachment.
These features make the STW70N60DM2 ideal for applications in power supplies, motor control, and other high-efficiency power conversion systems.

Package

The STW70N60DM2 is packaged in a TO-247 form factor. This package type is designed for high-power applications, providing efficient thermal management and ease of mounting.

Manufacturer

The STW70N60DM2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for its expertise in various sectors, including automotive, industrial, consumer electronics, and communication. The company designs and produces a wide range of semiconductor devices and solutions, including power transistors, microcontrollers, and sensors. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics operates in numerous countries and is a key player in the semiconductor industry, focusing on innovation and sustainability in its products and processes.

Application

The STW70N60DM2 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include switched-mode power supplies (SMPS), electric motor drives, and industrial power converters. It is suitable for high-frequency switching applications and can be found in photovoltaic inverters, UPS systems, and consumer electronics. Additionally, its low on-resistance and high-speed switching capabilities make it ideal for automotive applications and lighting control systems.

Equivalent

The STW70N60DM2 is a 600V N-channel MOSFET with a 70A continuous current rating. Equivalent products include:
1. IXFH70N60 - IXYS
2. IRF840 - Infineon
3. FQP70N60 - ON Semiconductor
4. MTP70N60 - ON Semiconductor
Check specific datasheets for detailed specifications to confirm compatibility for your application.

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Versandgebührenreferenz (DHL/FedEx):

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von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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