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STW70N60M2
MOSFET N-CH 600V 68A TO247
- Hersteller
- Fr. Teil #STW70N60M2
- Paket TO-247
- Datenblatt STW70N60M2 DataSheet
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Spezifikationen
| Package | Tube |
| Series | MDmesh™ II Plus |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 68A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 40mOhm @ 34A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 118 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 5200 pF @ 100 V |
| PowerDissipation(Max) | 450W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247 |
Übersicht
Description
This MOSFET features a fast switching speed, making it suitable for high-frequency applications, and its insulated gate allows for easy driving. Its robust design includes a high level of avalanche rating, ensuring reliability under dynamic conditions. The package options typically include TO-220 and DPAK, facilitating integration into various circuit designs.
The STW70N60M2 is commonly used in applications such as DC-DC converters, inverters, and other power electronic circuits where high efficiency and thermal performance are critical. It represents a reliable choice for engineers seeking to optimize performance in demanding power applications.
Features
1. Voltage Rating: 600V maximum drain-source voltage, making it suitable for high-voltage circuits.
2. Current Rating: Continuous drain current of 70A, allowing it to handle substantial loads.
3. On-Resistance: Low R_DS(on) of approximately 0.18 ohms at V_GS = 10V, which contributes to high efficiency and reduced power loss.
4. Gate Threshold Voltage: V_GS(th) typically between 2 to 4V, offering flexibility in gate drive design.
5. Fast Switching: Optimized for fast switching speeds, beneficial for applications like switch-mode power supplies and inverters.
6. Thermal Performance: With a junction-to-case thermal resistance of 0.35 °C/W, it efficiently manages heat dissipation.
7. Package Type: Available in TO-247, facilitating easy mounting and good thermal conductivity.
Overall, the STW70N60M2 is ideal for power management in industrial and consumer electronics.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the device when the MOSFET is turned on. It is connected to the load in the circuit.
3. Source (S): This pin is the output side of the MOSFET, where current exits. It is connected to the ground or negative side of the power supply in most applications.
The STW70N60M2 is known for its high voltage rating of 600V and a continuous drain current of up to 70A, making it suitable for various high-power applications.
Manufacturer
Application
Equivalent
1. Infineon IPW70R060C6
2. ON Semiconductor NTP70N60
3. Vishay SILICONIX SQW70N60
4. Fairchild FDB70N60
5. NXP PSMN2R8-60
Always verify specifications such as R_DS(on), gate charge, and thermal characteristics for compatibility in your application.
Versand
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Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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2. Kredit- / Debitkarte
3. Überweisung
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