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STY139N65M5
MOSFET N-CH 650V 130A MAX247
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- Datenblatt STY139N65M5 DataSheet
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Spezifikationen
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 130A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 17mOhm @ 65A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 363 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 15600 pF @ 100 V |
| PowerDissipation(Max) | 625W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | MAX247™ |
Übersicht
Description
The "N" in the model number typically indicates an N-channel type, which is commonly used in power conversion circuits. The "65M5" refers to the maximum voltage rating (650V) and the specific generation or series of the device. This component offers benefits like reduced conduction losses, improved thermal performance, and higher switching frequencies compared to traditional silicon-based MOSFETs.
When integrating the STY139N65M5 into a design, one must consider its thermal management, gate drive requirements, and overall system topology to maximize performance and reliability.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 139A, enabling it to drive heavy loads effectively.
3. R_DS(on): It offers a low on-state resistance (R_DS(on)) of around 0.139 ohms, which helps reduce conduction losses and improve efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 2 to 4V, allowing for easy drive with standard gate voltages.
5. Fast Switching: The MOSFET features fast switching times, making it suitable for applications such as switch-mode power supplies (SMPS) and inverters.
6. Thermal Performance: It has a robust thermal management capability, with a maximum operating junction temperature of 175°C.
These features make the STY139N65M5 an ideal choice for high-efficiency and high-power applications.
Package
Pinout
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The output terminal where the load connects.
3. Source (S) - The reference terminal, usually connected to ground in common applications.
4. Gate-Source (G-S) Protection Diode - Internal clamp for gate protection.
5. Thermal Pad - Used for heat dissipation.
This device operates at a maximum drain-source voltage of 650V and is designed for high efficiency in applications like power supplies and motor drives. The low on-resistance helps in reducing conduction losses, making it suitable for high-frequency operations.
Manufacturer
Application
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