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SUD19P06-60-GE3
MOSFET P-CH 60V 18.3A TO252
- Hersteller
- Fr. Teil #SUD19P06-60-GE3
- Paket TO-252-3
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 18.3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 60mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 40 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1710 pF @ 25 V |
| PowerDissipation(Max) | 2.3W (Ta), 38.5W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
Übersicht
Description
For precise information, it would be best to consult the course catalog of the institution offering SUD19P06-60-GE3, where you'll find details on the syllabus, learning objectives, prerequisites, and assessment methods. If you have access to the educational institution's resources, they can provide up-to-date and relevant information on this course.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Can handle continuous drain current (I_D) of up to 19A, making it suitable for high-power applications.
3. Low On-Resistance: Offers a low R_DS(on) value, typically around 0.06 ohms, ensuring efficient operation and reduced heat generation during switching.
4. Fast Switching Speed: Designed for quick turn-on and turn-off times, enhancing efficiency in switching applications.
5. Thermal Resistance: Features a low thermal resistance, allowing for better heat dissipation and improved performance under load.
6. TO-220 Package: Comes in a TO-220 package, facilitating easy heat sinking and better thermal management.
This MOSFET is ideal for use in automotive, industrial, and consumer electronics applications, particularly in DC-DC converters and power management circuits.
Package
Pinout
Pin Configuration:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the load current flows; it's where the output is connected.
3. Source (S) - The terminal connected to the power supply or ground, depending on the configuration.
The device is designed for high voltage and high current applications, offering a maximum drain-source voltage (V_DS) of -60V and a continuous drain current (I_D) of up to -19A. It provides low on-resistance (R_DS(on)), making it efficient for switching applications.
Manufacturer
Application
Equivalent
Versand
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Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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