SUM110N10-09-E3

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SUM110N10-09-E3

MOSFET N-CH 100V 110A TO263

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Spezifikationen

Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6700 pF @ 25 V
Power Dissipation (Max) 3.75W (Ta), 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number SUM110

Übersicht

Description

SUM110N10-09-E3 refers to a specific module or course code, potentially related to a subject in mathematics, statistics, or a similar field. The "SUM" prefix might indicate a focus on summation techniques or a course on introductory mathematics. The numbers could specify the level of the course (e.g., introductory or foundational level indicated by "110") and its sequence or version (like "10-09-E3").
Typically, such courses cover fundamental concepts, including basic operations, number theory, algebra, and possibly introductory statistics. Students would learn essential skills needed for advanced studies in mathematics or related disciplines. The course format could include lectures, problem-solving sessions, and assessments to gauge understanding.
For a more precise explanation, additional context regarding the educational institution or curriculum would be helpful.

Features

The SUM110N10-09-E3 is a high-performance N-channel MOSFET designed for various applications, notable for its low on-resistance and efficient power management. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) of 100V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current (Id) of up to 110A, allowing for significant power handling.
3. Low On-Resistance: Typical Rds(on) of around 9mΩ at 10V gate drive, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: Capable of high-speed switching, making it ideal for DC-DC converters and power supply applications.
5. Thermal Performance: Designed for good thermal conductivity, ensuring reliability under high-load conditions.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
This MOSFET is suitable for automotive, industrial, and consumer electronics applications where efficiency and reliability are crucial.

Package

The SUM110N10-09-E3 is packaged in a TO-220 form factor, which is a type of metal-can package commonly used for power transistors and other high-power devices, providing efficient heat dissipation and easy mounting.

Pinout

The SUM110N10-09-E3 is a power MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the on/off state of the MOSFET. A voltage applied to this pin allows current to flow from the drain to the source.

2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground (or the negative side of the load) and is the return path for the current flowing through the MOSFET.
The SUM110N10-09-E3 is designed for high-speed switching applications and is suitable for various power management tasks in electronic circuits. Its specifications include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 110A, making it ideal for high-power applications.

Manufacturer

The SUM110N10-09-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is headquartered in Malvern, Pennsylvania, USA. Vishay operates in various sectors, including industrial, automotive, telecommunications, computing, and consumer electronics. They are known for their wide range of products, including diodes, capacitors, resistors, and MOSFETs, among others. The SUM110N10-09-E3 is a power MOSFET, commonly used in applications such as power management and switching. Vishay is recognized for its commitment to innovation, quality, and reliability in the electronic components industry.

Application

The SUM110N10-09-E3 is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drivers, and power switching circuits. Its low on-resistance and high-speed switching capabilities make it suitable for industrial automation, consumer electronics, and renewable energy systems. Additionally, it can be used in automotive applications for efficient power distribution and control.

Equivalent

The SUM110N10-09-E3 chip is a power MOSFET. Equivalent products include the STMicroelectronics STP10NK90Z, Infineon IPP10N10N3, and ON Semiconductor NTP10N10. Always check specific datasheets for exact specifications to ensure compatibility.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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