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SUM110P04-05-E3
MOSFET P-CH 40V 110A TO263
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- Fr. Teil #SUM110P04-05-E3
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Spezifikationen
| Series | TrenchFET® |
| Part Status | Active |
| Base Product Number | SUM110 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 11300 pF @ 25 V |
| Power Dissipation (Max) | 15W (Ta), 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
Students can expect to engage in lectures, hands-on practice, and assessments designed to enhance their understanding and application of the material. For precise details, including the syllabus, learning outcomes, and assessment methods, it is advisable to consult the academic institution offering the course or refer to official course documentation.
Features
1. Low On-Resistance: Ensures minimal power loss and heat generation, enhancing overall efficiency.
2. High Voltage Rating: Suitable for applications requiring voltage withstands up to 100V, making it versatile for various power management circuits.
3. Fast Switching Speed: Reduces switching losses, enabling high-frequency operation, which is crucial for applications like DC-DC converters.
4. Thermal Performance: Designed with a robust package to maintain effective heat dissipation, improving reliability and longevity.
5. Low Gate Charge: Allows for reduced driving power requirements, further enhancing efficiency in circuit designs.
These features make the SUM110P04-05-E3 an excellent choice for power applications in automotive, industrial, and consumer electronics sectors.
Package
Pinout
1. Gate (G): Controls the MOSFET operation, turning it on or off.
2. Drain (D): The terminal where the current flows out of the device to the load.
3. Source (S): The terminal where current enters the device, commonly connected to ground in switching applications.
4. Secondary Gate (G): In some configurations, a second gate may be available for additional control.
5. Body Diode (not a distinct pin, but a function): Provides reverse current capability, allowing operation in a variety of circuit configurations.
This device is typically used in power management applications, including DC-DC converters and motor drivers, due to its high efficiency and thermal performance.
Manufacturer
Application
Equivalent
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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