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SUM65N20-30-E3
MOSFET N-CH 200V 65A TO263
- Hersteller
- Fr. Teil #SUM65N20-30-E3
- Paket TO-263-3
- Datenblatt SUM65N20-30-E3 DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 65A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 30mOhm @ 30A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 130 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5100 pF @ 25 V |
| PowerDissipation(Max) | 3.75W (Ta), 375W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-263 (D²Pak) |
Übersicht
Description
This device is constructed using advanced semiconductor technology, ensuring fast switching speeds and improved thermal performance. It typically comes in a TO-220 package, making it easy to mount on heat sinks for better heat dissipation. The MOSFET also has a gate threshold voltage (VGS(th)) that allows it to be driven directly by microcontrollers or other low-voltage logic devices.
Overall, the SUM65N20-30-E3 is ideal for engineers looking to design efficient and reliable power systems. Its combination of high voltage, current handling capacity, and low resistance makes it a preferred choice in various electronic applications.
Features
1. Voltage Rating: With a maximum drain-source voltage (V_DS) of 65V, it is suitable for a variety of power applications.
2. Current Rating: It has a continuous drain current (I_D) of 30A, making it capable of handling significant load demands.
3. R_DS(on): The device exhibits a low on-resistance (R_DS(on)), typically around 25 mΩ, which enhances efficiency by minimizing power loss during operation.
4. Switching Speed: Designed for fast switching times, it helps in improving the overall performance in high-frequency applications.
5. Package Type: It comes in a TO-220 package, facilitating easy heat dissipation and PCB mounting.
6. Thermal Performance: With a high thermal conductivity, it can operate effectively in demanding thermal environments.
These features make the SUM65N20-30-E3 ideal for applications in power supplies, motor drivers, and other high-efficiency circuits.
Package
Pinout
1. Gate (G): Controls the on/off state of the MOSFET. Applying a voltage to this pin turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): The terminal through which the load current flows. It is connected to the output of the circuit where the device will deliver power.
3. Source (S): The terminal through which the current exits the MOSFET, typically connected to ground or the negative supply in a circuit.
The SUM65N20-30-E3 is designed for high-efficiency applications, handling high voltage and current levels. It is often used in power management, DC-DC converters, and other switching applications.
Manufacturer
Application
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Versand
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Zahlungen
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