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TP65H050WS
GANFET N-CH 650V 34A TO247-3
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Spezifikationen
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| Power Dissipation (Max) | 119W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Base Product Number | TP65H050 |
Übersicht
Description
With a maximum drain-source voltage (VDS) of 65V and a continuous drain current (ID) of up to 50A, the TP65H050WS is suitable for demanding environments. Its fast switching speeds improve efficiency in switching applications, while its robust thermal performance ensures reliability under high load conditions.
The TO-220 package allows for effective heat dissipation, making it easier to manage thermal performance in designs. Overall, the TP65H050WS is an excellent choice for engineers looking to enhance power efficiency and performance in various electronic applications.
Features
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 650V, making it suitable for high-voltage applications.
2. Current Capacity: The device supports a continuous drain current (I_D) of 65A, allowing for substantial load handling.
3. On-Resistance: It has a low on-resistance (R_DS(on)) specification, typically around 0.050 Ohms, which enhances efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is designed to ensure reliable switching characteristics.
5. Fast Switching Speed: The MOSFET exhibits quick turn-on and turn-off characteristics, which are beneficial for high-frequency applications.
6. Robust Packaging: It is available in a TO-220 package, facilitating heat dissipation and easy integration into various circuits.
These features make the TP65H050WS an excellent choice for applications in power supplies, motor controls, and energy conversion systems.
Package
Pinout
The pinout typically comprises:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
4. Body Diode (internal) - Allows current to flow in the reverse direction, useful for inductive loads.
5. Thermal Pad (if available) - For heat dissipation, improving reliability in high-power applications.
With a maximum drain-source voltage (V_DS) of 65V and a continuous drain current (I_D) of up to 50A, it is suitable for high-performance applications. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Manufacturer
Application
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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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