UF3SC120009K4S

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UF3SC120009K4S

SICFET N-CH 1200V 120A TO247-4

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  • Fr. Teil #UF3SC120009K4S
  • Paket TO-247-4
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Spezifikationen

Package Tube
ProductStatus Active
FETType N-Channel
Technology SiCFET (Cascode SiCJFET)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 12V
RdsOn(Max)@IdVgs 11mOhm @ 100A, 12V
Vgs(th)(Max)@Id 6V @ 10mA
GateCharge(Qg)(Max)@Vgs 234 nC @ 15 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 8512 pF @ 100 V
PowerDissipation(Max) 789W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-4

Übersicht

Description

UF3SC120009K4S is a model designation that typically refers to a specific electronic component or semiconductor device, often used in power management or conversion applications. The "UF" prefix may indicate a particular series or family of devices, while the subsequent alphanumeric characters denote specifications such as voltage ratings, package types, or performance characteristics.
These components are commonly utilized in applications like power supplies, converters, and other electronic circuits requiring efficient energy management. To gain a better understanding of its functionalities, specifications, and applications, consulting the manufacturer's datasheet is essential, as it provides detailed information such as electrical characteristics, thermal performance, and pin configurations. This information is crucial for engineers and designers when integrating the component into electronic systems.

Features

The UF3SC120009K4S is a silicon carbide (SiC) MOSFET known for its high efficiency and performance in power electronics. Key features include:
1. Voltage Rating: It typically has a high breakdown voltage, often around 1200V, making it suitable for high-voltage applications.
2. Low On-Resistance: This contributes to reduced conduction losses, enhancing overall efficiency.
3. High Switching Speed: The SiC technology allows for faster switching times, which reduces the size of passive components and improves thermal performance.
4. High-temperature Operation: These devices can operate at elevated temperatures, often exceeding 150°C, which is beneficial in harsh environments.
5. Rugged Design: Built to withstand high voltages and temperatures, they demonstrate reliability in demanding applications.
6. Applications: Commonly used in industrial drives, renewable energy systems, and electric vehicles due to their efficiency and thermal management capabilities.
Overall, the UF3SC120009K4S offers a combination of high performance, efficiency, and reliability for modern power electronic systems.

Package

The UF3SC120009K4S is a power semiconductor device packaged in a DPAK (also known as TO-252) format. This package type is designed for surface mounting and offers efficient thermal performance, making it suitable for various applications in power management and conversion.

Pinout

The UF3SC120009K4S is a type of high-frequency, low-loss RF switch. It typically features a pin count of 16. The primary functions of this component include signal routing, enabling or disabling RF signals, and switching between different RF paths in various applications such as telecommunications, networking, and RF front-end systems. Each pin serves specific roles, including power supply, ground connection, control signals, and RF input/output connections. For precise pin assignments and further details, it's recommended to consult the manufacturer's datasheet.

Manufacturer

The UF3SC120009K4S is manufactured by United Silicon Carbide Inc. (USCi), which specializes in wide bandgap semiconductor technology, particularly silicon carbide (SiC) devices. USCi focuses on the development and production of high-performance power semiconductor solutions for various applications, including electric vehicles, renewable energy, and industrial power systems. The company aims to enhance energy efficiency and performance in power electronics through its innovative SiC technology.

Application

The UF3SC120009K4S is a silicon carbide (SiC) MOSFET used in high-efficiency power conversion applications. Its primary application areas include electric vehicles, renewable energy systems (like solar inverters), industrial motor drives, and power supplies. Its high switching speed, thermal efficiency, and ability to operate at elevated temperatures make it suitable for demanding environments in power electronics.

Equivalent

The UF3SC120009K4S chip is equivalent to several silicon carbide (SiC) MOSFETs and may be replaced by options such as the Infineon IMEF120R045M1 or the Cree/Wolfspeed C3M0120120K. Always verify specifications like voltage rating, current capacity, and thermal performance to ensure compatibility in your application.

Versand

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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