VNN3NV04PTR-E

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VNN3NV04PTR-E

IC PWR DRIVER N-CHAN 1:1 SOT223

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series OMNIFET II™, VIPower™
ProductStatus Active
SwitchType General Purpose
NumberofOutputs 1
Ratio-Input:Output 1:1
OutputConfiguration Low Side
OutputType N-Channel
Interface On/Off
Voltage-Load 36V (Max)
Voltage-Supply(Vcc/Vdd) Not Required
Current-Output(Max) 3.5A
RdsOn(Typ) 120mOhm (Max)
InputType Non-Inverting
FaultProtection Current Limiting (Fixed), Over Temperature, Over Voltage
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-223

Übersicht

Description

"Introduction to VNN3NV04PTR-E" likely refers to a specific course, module, or technical document related to an area in technology, engineering, or a specialized field. Without more context, it is challenging to specify the exact nature of VNN3NV04PTR-E. However, such identifiers typically denote version numbers, part numbers, or codes for specific components, tools, or educational content.
If it's a course, the introduction might cover the fundamentals and goals, providing an overview of what participants will learn, such as key concepts, skills, or systems related to "VNN3NV04PTR-E." If it's a technical document or product manual, the introduction would usually explain the purpose, functionality, and application areas of the technology or product, possibly addressing the intended audience and prerequisites for understanding the content.
For more precise information, consulting the document itself or accompanying resources would be necessary to understand its scope and application fully.

Features

The VNN3NV04PTR-E is a MOSFET transistor designed for use in various electronic applications. Key features include:
1. N-Channel MOSFET: Suitable for switching and amplification purposes.
2. Low On-Resistance: Offers efficient performance with reduced energy loss.
3. High-Speed Switching: Ensures quick transitions between on and off states, enhancing performance in high-frequency applications.
4. Compact Package: Available in a small form factor, making it ideal for space-constrained designs.
5. Thermal Performance: Designed to handle thermal dissipation effectively, which supports its reliability and longevity in operation.
6. Voltage Handling: Capable of managing a range of voltages, suitable for different circuit requirements.
7. Current Capacity: Supports a specific maximum continuous current, suitable for various load demands.
These features make the VNN3NV04PTR-E versatile for use in automotive, industrial, and consumer electronics applications, where efficient power management and space-saving solutions are critical.

Package

The package type of VNN3NV04PTR-E is a surface-mount device in a PowerPAK® 1212-8 package. This package is compact and designed to provide efficient thermal performance and electrical characteristics for power MOSFETs, making it suitable for high-power applications in compact spaces.

Pinout

The VNN3NV04PTR-E is an automotive-grade N-channel MOSFET produced by STMicroelectronics. It typically comes in a DPAK (TO-252) package. The pin count for the DPAK package is generally 3 pins, plus a tab that acts as the fourth connection.
Here's a concise breakdown of the pin functions for a typical MOSFET in a DPAK package like the VNN3NV04PTR-E:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here determines whether the MOSFET is on or off.
2. Drain (D): This pin is the main terminal through which the current flows when the MOSFET is in the 'on' state.
3. Source (S): This pin serves as the terminal that completes the circuit with the drain.
4. Tab (connected to Drain): The tab is usually connected electrically to the drain and helps in heat dissipation.
This MOSFET is designed for a variety of automotive applications due to its robustness and efficiency. Always refer to the specific datasheet for detailed and accurate information.

Manufacturer

The VNN3NV04PTR-E is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products, including integrated circuits and discrete devices. The company serves various applications, such as automotive, industrial, personal electronics, and communications. It is known for its innovation in semiconductor technology and its role in enabling smarter and more efficient electronic devices.

Application

The VNN3NV04PTR-E is a Power MOSFET, typically used in applications requiring efficient power management and switching. Its application areas include DC-DC converters, load switching, motor drivers, and power supplies. It is valued for its low on-resistance and high-speed switching capabilities, making it suitable for compact and high-efficiency designs in consumer electronics, automotive systems, and industrial controls.

Equivalent

The VNN3NV04PTR-E is a power MOSFET by STMicroelectronics. Equivalent products would be those with similar voltage, current ratings, package type, and technology. Some possible equivalents include:
1. IRF530N by Infineon or Vishay (N-channel MOSFET)
2. FQP30N06L by ON Semiconductor (N-channel MOSFET)
3. NTD4906N by ON Semiconductor (N-channel MOSFET)
Always verify specific electrical characteristics and pin compatibility before substituting.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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