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ZXMN10A08DN8TA
MOSFET 2N-CH 100V 1.6A 8SO
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Spezifikationen
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 3.2A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 405pF @ 50V |
| Power - Max | 1.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | ZXMN10 |
Übersicht
Description
This MOSFET is characterized by its fast switching capabilities, enabling efficient operation in both linear and switching modes. Its small package size (DPAK) allows for easy integration into compact designs. The ZXMN10A08DN8TA is often used in applications such as DC-DC converters, LED drivers, and battery management systems, where reliability and efficiency are critical.
When designing circuits with this component, attention to thermal management and voltage ratings is essential to ensure optimal performance and longevity.
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 80V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 10A, facilitating robust performance in various applications.
3. Low On-Resistance: It features a low R_DS(on) of approximately 0.1Ω at V_GS = 10V, which minimizes power loss during operation.
4. Fast Switching: The MOSFET is optimized for fast switching, which enhances efficiency in applications like power supplies and DC-DC converters.
5. Package Type: It comes in a compact DPAK (TO-252) package, allowing for efficient thermal management and ease of integration into circuit designs.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is relatively low, enabling operation with lower gate drive voltages.
These features make the ZXMN10A08DN8TA suitable for applications in power management, automotive, and industrial sectors.
Package
Pinout
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET operation.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The input terminal where current flows in.
The device is designed for low on-resistance and high-speed switching applications, making it suitable for use in DC-DC converters, motor drivers, and other power control circuits. Typically, this device is rated for a maximum drain current of around 10A and a voltage rating of about 30V, depending on specific conditions.
Make sure to consult the datasheet for precise specifications and electrical characteristics.
Manufacturer
Application
Equivalent
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Zahlungen
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