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IPB60R380C6
- Hersteller
- Fr. Teil #IPB60R380C6
- Paket D2PAK-3 (TO-263-3)
- Datenblatt IPB60R380C6 DataSheet
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Spezifikationen
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity:Factory Pack Quantity | 1000 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Style | SMD/SMT |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 10.6 A |
| Rds On - Drain-Source Resistance | 340 mOhms |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Qg - Gate Charge | 32 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 83 W |
| Channel Mode | Enhancement |
| Tradename | CoolMOS |
| Configuration | Single |
| Fall Time | 9 ns |
| Height | 4.4 mm |
| Length | 10 mm |
| Rise Time | 10 ns |
| Series | CoolMOS C6 |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 110 ns |
| Typical Turn-On Delay Time | 15 ns |
| Width | 9.25 mm |
| Part # Aliases | IPB6R38C6XT SP000660634 IPB60R380C6ATMA1 |
| Unit Weight | 4 g |
| Package/Case | D2PAK-3 (TO-263-3) |
| Delivery Restrictions | Mouser does not presently sell this product in your region. |
Übersicht
Description
Utilized in power supplies, motor drives, and industrial applications, the IPB60R380C6 offers fast switching capabilities and is ideal for synchronous rectification. Its robust construction ensures reliability in demanding environments. The device is available in a TO-220 package, facilitating easy heat dissipation and integration into various circuit designs. The IPB60R380C6 is favored by engineers for its performance, efficiency, and versatility in power electronic systems.
Features
1. Voltage Rating: 600V, suitable for high-voltage applications.
2. Current Rating: 38A continuous drain current, allowing for significant power handling.
3. On-Resistance (RDS(on)): Low on-resistance of approximately 0.38 ohms at a gate-source voltage of 10V, reducing conduction losses.
4. Gate Threshold Voltage: Typically ranges from 2V to 4V, facilitating easier drive control.
5. Fast Switching Speed: Designed for high-speed operation, beneficial in switching power supplies and converters.
6. Package: Available in a TO-220 package, providing effective thermal dissipation.
7. Applications: Ideal for use in motor drives, power supplies, and inverters in renewable energy systems.
Overall, the IPB60R380C6 offers a combination of high voltage, current capacity, and efficiency, making it a versatile choice for numerous power management solutions.
Package
Pinout
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the current flows out when the device is on.
3. Source (S) - The terminal through which the current enters the device.
4. Body Diode - An intrinsic diode between the drain and source, allowing current flow in the reverse direction when necessary.
This MOSFET is designed for high-efficiency applications, such as power supplies and motor drives, and has a maximum drain-source voltage (V_DS) of 600V and a maximum continuous drain current (I_D) of 38A. The low R_DS(on) helps reduce power losses during operation.
Manufacturer
Application
Equivalent
Versand
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
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